Near-infrared femtosecond laser-induced crystallization of amorphous silicon

Applied Physics Letters

Volumn 85, Issue 7, 2004, Pages 1232-1234

  Shieh, Jia Min ^a   Chen, Zun Hao ^a   Dai, Bau Tong ^a   Wang, Yi Chao ^b   Zaitsev, Alexei ^b   Pan, Ci Ling ^b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FEMTOSECOND LASER ANNEALING (FLA); IRRADIATED MATERIAL; PHOTOEXCITED PLASMA; SUPERLATERAL EPITAXY;

ADSORPTION; AMORPHOUS SILICON; ANNEALING; EPITAXIAL GROWTH; IRRADIATION; LASER BEAMS; MELTING; NONLINEAR CONTROL SYSTEMS; SCANNING; THIN FILM TRANSISTORS; ULTRAFAST PHENOMENA;

CRYSTALLIZATION;

EID: 4444237407     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1782267     Document Type: Article

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