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Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 848-852
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Formation of Ge nanocrystals and SiGe in PECVD grown SiNx:Ge thin films
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Author keywords
Ge nanocrystals; Raman Scattering Spectroscopy
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Indexed keywords
ANNEALING;
GERMANIUM;
PHONONS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
RAMAN SCATTERING;
GE NANOCRYSTALS;
PHONON MODES;
POST-VACUUM ANNEALING;
NANOSTRUCTURED MATERIALS;
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EID: 33845229978
PISSN: 13698001
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mssp.2006.08.073 Document Type: Article |
Times cited : (3)
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References (10)
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