Normally-on/off AlN/GaN high electron mobility transistors

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 10, 2010, Pages 2415-2418

  Chang, C Y ^a   Lo, C F ^a   Ren, F ^a   Pearton, S J ^a   Kravchenko, I I ^b   Dabiran, A M ^c   Cui, B ^c   Chow, P P ^c  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c SVT ASSOCIATES   (United States)

Author keywords

AlN GaN; Gate characteristics; MBE; On off HEMTs; Transconductance

Indexed keywords

AL OXIDE; ALN/GAN; CURRENT GAINS; CURRENT VOLTAGE CURVE; ENHANCEMENT-MODE; EXTRINSIC TRANSCONDUCTANCE; GATE CHARACTERISTICS; GATE CURRENT; MAXIMUM FREQUENCY OF OSCILLATIONS; MBE; METAL-OXIDE-SEMICONDUCTOR DIODE; ON/OFF HEMTS; OXYGEN EXPOSURE; OXYGEN PLASMA EXPOSURE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; TREATMENT TIME;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON MOBILITY; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OXYGEN; SEMICONDUCTOR DIODES; TRANSCONDUCTANCE; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 78449264719     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983901     Document Type: Article

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