Study of discrete doping-induced variability in junctionless nanowire MOSFETs using dissipative quantum transport simulations

IEEE Electron Device Letters

Volumn 33, Issue 2, 2012, Pages 194-196

  Aldegunde, Manuel ^a   Martinez, Antonio ^b   Barker, John R ^c  

^a Centro de Supercomputacion de Galicia   (Spain)

^b SWANSEA UNIVERSITY   (United Kingdom)

^c UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Dissipation; junctionless transistor; nanowire MOSFET; nonequilibrium Green's functions (NEGF); phonon scattering; variability

Indexed keywords

CROSS SECTION; DOPANT DISTRIBUTION; DOPING CONCENTRATION; DOPING LEVELS; GATE-ALL-AROUND; INVERSION MODES; N TYPE SILICON; NANOWIRE MOSFETS; NANOWIRE TRANSISTORS; NON-EQUILIBRIUM GREEN'S FUNCTION; QUANTUM TRANSPORT SIMULATIONS; SUBTHRESHOLD VARIABILITY; VARIABILITY;

ENERGY DISSIPATION; NANOWIRES; PHONON SCATTERING; PHONONS; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS;

MOSFET DEVICES;

EID: 84856266781     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2177634     Document Type: Article

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