Sensitivity of threshold voltage to nanowire width variation in junctionless transistors

IEEE Electron Device Letters

Volumn 32, Issue 2, 2011, Pages 125-127

  Choi, Sung Jin ^a   Moon, Dong Il ^a   Kim, Sungho ^a   Duarte, Juan P ^a   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

All around gate (AAG); body thickness; Bosch process; bulk substrate; fluctuation; gated resistor; junctionless transistor; silicon nanowire (SiNW); threshold voltage; variation; width

Indexed keywords

ALL-AROUND GATE; BODY THICKNESS; BOSCH PROCESS; BULK SUBSTRATES; FLUCTUATION; GATED RESISTOR; JUNCTIONLESS TRANSISTOR; SILICON NANOWIRE (SINW); VARIATION; WIDTH;

DOPING (ADDITIVES); NANOWIRES; REACTIVE ION ETCHING; RESISTORS; SENSITIVITY ANALYSIS; THRESHOLD VOLTAGE;

TRANSISTORS;

EID: 79151480956     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2093506     Document Type: Article

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