A novel junctionless all-around-gate SONOS device with a quantum nanowire on a bulk substrate for 3D stack NAND flash memory

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2011, Pages 74-75

  Choi, Sung Jin ^a   Moon, Dong Il ^a   Duarte, J P ^a   Kim, Sungho ^a   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SUBSTRATES; DEEP RIE; DOPED SILICON; GATE LENGTH; NAND FLASH MEMORY; QUANTUM NANOWIRES; READ CURRENT; SONOS DEVICES;

NANOWIRES; THREE DIMENSIONAL;

FLASH MEMORY;

EID: 80052689784     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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3. W. Kim et al., VLSI Tech. Dig., p.188, 2009.
4. K. D. Suh et al., IEEE Journal of Solid-State Circuits, p.1149, 1995.
5. F. Laermer et al., US-Patent No. 5501893.