-
1
-
-
46049119669
-
Ultranarrow silicon nanowire gate-all-around CMOSdevices: Impact of diameter, channel-orientation and low temperature on device performance
-
N. Singh, F. Y. Lim, W. W. Fang, S. C. Rustagi, L. K. Bera, A. Agarwal, C. H. Tung, K. M. Hoe, S. R. Omampuliyur, D. Tripathi1, A. O. Adeyeye1, G. Q. Lo, N. Balasubramanian, and D. L. Kwong, "Ultranarrow silicon nanowire gate-all-around CMOSdevices: Impact of diameter, channel-orientation and low temperature on device performance," in IEDM Tech. Dig., 2006, pp. 547-550.
-
(2006)
IEDM Tech. Dig.
, pp. 547-550
-
-
Singh, N.1
Lim, F.Y.2
Fang, W.W.3
Rustagi, S.C.4
Bera, L.K.5
Agarwal, A.6
Tung, C.H.7
Hoe, K.M.8
Omampuliyur, S.R.9
Tripathi, D.10
Adeyeye, A.O.11
Lo, G.Q.12
Balasubramanian, N.13
Kwong, D.L.14
-
2
-
-
38949130708
-
Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors
-
Feb
-
K. H. Cho, K. H. Yeo, Y. Y. Yeoh, S. D. Suk, M. Li, J. M. Lee, M. K. Kim, D. W. Kim, D. Park, B. H. Hong, Y. C. Jung, and S. W. Hwang, "Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors," Appl. Phys. Lett., vol. 92, no. 5, pp. 052 102-1-052 102-3, Feb. 2008.
-
(2008)
Appl. Phys. Lett.
, vol.92
, Issue.5
, pp. 0521021-0521023
-
-
Cho, K.H.1
Yeo, K.H.2
Yeoh, Y.Y.3
Suk, S.D.4
Li, M.5
Lee, J.M.6
Kim, M.K.7
Kim, D.W.8
Park, D.9
Hong, B.H.10
Jung, Y.C.11
Hwang, S.W.12
-
3
-
-
1942452410
-
Non-equilibrium quantum transport in finite device structures in the presence of non-self-averaged atomistic impurity scattering
-
Apr
-
J. R. Barker, "Non-equilibrium quantum transport in finite device structures in the presence of non-self-averaged atomistic impurity scattering," Semicond. Sci. Technol., vol. 19, no. 4, pp. S56-S59, Apr. 2004.
-
(2004)
Semicond. Sci. Technol.
, vol.19
, Issue.4
-
-
Barker, J.R.1
-
4
-
-
3242696889
-
Quantum fluctuations in atomistic semiconductor devices
-
Sep
-
J. R. Barker, "Quantum fluctuations in atomistic semiconductor devices," Superlattices Microstruct., vol. 34, no. 3-6, pp. 361-366, Sep. 2004.
-
(2004)
Superlattices Microstruct.
, vol.34
, Issue.3-6
, pp. 361-366
-
-
Barker, J.R.1
-
5
-
-
21844460454
-
Green function simulation study of non self-averaging scattering processes in atomistic semiconductor devices
-
Dec
-
J. R. Barker, "Green function simulation study of non self-averaging scattering processes in atomistic semiconductor devices," J. Comput. Electron., vol. 2, no. 2-4, pp. 153-161, Dec. 2003.
-
(2003)
J. Comput. Electron.
, vol.2
, Issue.2-4
, pp. 153-161
-
-
Barker, J.R.1
-
6
-
-
23744458365
-
Theoretical investigation of surface roughness scattering in silicon nanowire transistors
-
Jul
-
J. Wang, E. Polizzi, A. Ghosh, S. Datta, and M. Lundstrom, "Theoretical investigation of surface roughness scattering in silicon nanowire transistors," Appl. Phys. Lett., vol. 87, no. 4, pp. 043 101-1-043 101-3, Jul. 2005.
-
(2005)
Appl. Phys. Lett.
, vol.87
, Issue.4
, pp. 0431011-0431013
-
-
Wang, J.1
Polizzi, E.2
Ghosh, A.3
Datta, S.4
Lundstrom, M.5
-
7
-
-
56549113551
-
Size dependence of surface-roughness-limited mobility in silicon-nanowires FETs
-
Nov
-
S. Poli, M. Pala, T. Poiroux, S. Deleonibus, and G. Baccarani, "Size dependence of surface-roughness-limited mobility in silicon-nanowires FETs," IEEE Trans. Electron. Devices, vol. 55, no. 11, pp. 2968-2976, Nov. 2008.
-
(2008)
IEEE Trans. Electron. Devices
, vol.55
, Issue.11
, pp. 2968-2976
-
-
Poli, S.1
Pala, M.2
Poiroux, T.3
Deleonibus, S.4
Baccarani, G.5
-
8
-
-
33947233244
-
Effect of growth orientation and surface roughness on electron transport in silicon nanowires
-
Mar
-
A. Svizhenko, P. W. Leu, and K. Cho, "Effect of growth orientation and surface roughness on electron transport in silicon nanowires," Phys. Rev. B, vol. 75, no. 12, p. 125 417, Mar. 2007.
-
(2007)
Phys. Rev. B
, vol.75
, Issue.12
, pp. 125-417
-
-
Svizhenko, A.1
Leu, P.W.2
Cho, K.3
-
9
-
-
33947147843
-
Atomistic treatment of interface roughness in Si nanowire transistors with different channel orientations
-
Mar
-
M. Luisier, A. Schenk, and W. Fichtner, "Atomistic treatment of interface roughness in Si nanowire transistors with different channel orientations," Appl. Phys. Lett., vol. 90, no. 10, pp. 102 103-1-102 103-3, Mar. 2007.
-
(2007)
Appl. Phys. Lett.
, vol.90
, Issue.10
, pp. 1021031-1021033
-
-
Luisier, M.1
Schenk, A.2
Fichtner, W.3
-
10
-
-
84893264597
-
Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity
-
Oct
-
S. Jin, M. V. Fischetti, and T. Tang, "Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity," J. Appl. Phys., vol. 102, no. 8, pp. 083 715-1-083 715-14, Oct. 2007.
-
(2007)
J. Appl. Phys.
, vol.102
, Issue.8
, pp. 0837151-08371514
-
-
Jin, S.1
Fischetti, M.V.2
Tang, T.3
-
11
-
-
77954033701
-
Variability in Si nanowire MOSFETs due to the combined effect of interface roughness and random dopants: A fully 3D NEGF study
-
Jul.
-
A. Martinez, N. Seoane, A. R. Brown, J. R. Barker, and A. Asenov, "Variability in Si nanowire MOSFETs due to the combined effect of interface roughness and random dopants: A fully 3D NEGF study," IEEE Trans. Electron Devices, vol. 57, no. 7, pp. 1626-1635, Jul. 2010.
-
(2010)
IEEE Trans. Electron Devices
, vol.57
, Issue.7
, pp. 1626-1635
-
-
Martinez, A.1
Seoane, N.2
Brown, A.R.3
Barker, J.R.4
Asenov, A.5
-
12
-
-
67650127116
-
Current variability in Si nanowire MOSFETs due to random dopants in the source/drain regions: A fully-3D NEGF simulation study
-
Jul
-
N. Seoane, A. Martinez, A. R. Brown, J. R. Barker, and A. Asenov, "Current variability in Si nanowire MOSFETs due to random dopants in the source/drain regions: A fully-3D NEGF simulation study," IEEE Trans. Electron Devices, vol. 56, no. 7, pp. 1388-1395, Jul. 2009.
-
(2009)
IEEE Trans. Electron Devices
, vol.56
, Issue.7
, pp. 1388-1395
-
-
Seoane, N.1
Martinez, A.2
Brown, A.R.3
Barker, J.R.4
Asenov, A.5
-
13
-
-
38849209164
-
A self-consistent full 3-D real-space NEGF simulator for studying nonperturbative effects in nano-MOSFETs
-
DOI 10.1109/TED.2007.902867
-
A. Martinez, M. Bescond, J. R. Barker, A. Svizhenko, M. P. Anantram, C. Millar, and A. Asenov, "A self-consistent 3D-full real space NEGF simulator for studying nonperturbative effect in Nano-MOSFETs," IEEE Trans. Electron Devices, vol. 54, no. 9, pp. 2213-2222, Sep. 2007. (Pubitemid 351485739)
-
(2007)
IEEE Transactions on Electron Devices
, vol.54
, Issue.9
, pp. 2213-2222
-
-
Martinez, A.1
Bescond, M.2
Barker, J.R.3
Svizhenko, A.4
Anantram, M.P.5
Millar, C.6
Asenov, A.7
-
14
-
-
41749112784
-
Theory of quantum transport in lateral nanostructures
-
M. A. Reed and W. P. Kirk, Eds., College Station, TX
-
J. R. Barker, "Theory of quantum transport in lateral nanostructures," in Proc. Int. Symp.-Nanostructure, Physics and Fabrication, M. A. Reed and W. P. Kirk, Eds., College Station, TX, 1989, p. 253.
-
(1989)
Proc. Int. Symp.-Nanostructure, Physics and Fabrication
, pp. 253
-
-
Barker, J.R.1
-
15
-
-
18644369368
-
Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches
-
Oct
-
R. Venugopal, Z. Ren, S. Datta, D. Jovanovic, and M. S. Lundstrom, "Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches," J. Appl. Phys., vol. 92, no. 7, pp. 3730-3739, Oct. 2002.
-
(2002)
J. Appl. Phys.
, vol.92
, Issue.7
, pp. 3730-3739
-
-
Venugopal, R.1
Ren, Z.2
Datta, S.3
Jovanovic, D.4
Lundstrom, M.S.5
-
16
-
-
33748300947
-
Quantum transport in twoand three-dimensional nanoscale transistors: Coupled mode effects in the nonequilibrium Green's function formalism
-
Aug
-
M. Luisier, A. Schenk, and W. Fichtner, "Quantum transport in twoand three-dimensional nanoscale transistors: Coupled mode effects in the nonequilibrium Green's function formalism," J. Appl. Phys., vol. 100, no. 4, pp. 043 713-1-043 713-12, Aug. 2006.
-
(2006)
J. Appl. Phys.
, vol.100
, Issue.4
, pp. 0437131-04371312
-
-
Luisier, M.1
Schenk, A.2
Fichtner, W.3
-
17
-
-
0024014552
-
Symmetry of electrical conduction
-
May
-
M. Buttiker, "Symmetry of electrical conduction," IBM J. Res. Develop., vol. 32, no. 3, pp. 317-334, May 1988.
-
(1988)
IBM J. Res. Develop.
, vol.32
, Issue.3
, pp. 317-334
-
-
Buttiker, M.1
-
18
-
-
0001004693
-
Definition and measurements of the electrical and thermal resistances
-
Jul
-
H. L. Engquist and P. L. Anderson, "Definition and measurements of the electrical and thermal resistances," Phys. Rev. B, vol. 24, no. 2, pp. 1151-1154, Jul. 1981.
-
(1981)
Phys. Rev. B
, vol.24
, Issue.2
, pp. 1151-1154
-
-
Engquist, H.L.1
Anderson, P.L.2
-
19
-
-
0033098173
-
Conductance viewed as transmission
-
Mar
-
Y. Imry and R. Landauer, "Conductance viewed as transmission," Rev. Mod. Phys., vol. 71, no. 2, pp. 306-312, Mar. 1999.
-
(1999)
Rev. Mod. Phys.
, vol.71
, Issue.2
, pp. 306-312
-
-
Imry, Y.1
Landauer, R.2
-
20
-
-
33646498298
-
Influence of band structure on electron ballistic transport in silicon nanowire MOSFETs: An atomistic study
-
Apr
-
K. Nehari, N. Cavassilas, J. L. Autran, M. Bescond, D. Munteanu, and M. Lannoo, "Influence of band structure on electron ballistic transport in silicon nanowire MOSFETs: An atomistic study," Solid State Electron., vol. 50, no. 4, pp. 716-721, Apr. 2006.
-
(2006)
Solid State Electron.
, vol.50
, Issue.4
, pp. 716-721
-
-
Nehari, K.1
Cavassilas, N.2
Autran, J.L.3
Bescond, M.4
Munteanu, D.5
Lannoo, M.6
-
21
-
-
0342723158
-
Single and multiband modeling of quantum electron transport through layered semiconductor devices
-
R. Lake, G. Klimeck, R. C. Bowen, and D. Jovanovic, "Single and multiband modeling of quantum electron transport through layered semiconductor devices," J. App. Phys., vol. 81, no. 12, pp. 7845-7869, Jun. 1997. (Pubitemid 127606872)
-
(1997)
Journal of Applied Physics
, vol.81
, Issue.12
, pp. 7845-7869
-
-
Lake, R.1
Klimeck, G.2
Bowen, R.C.3
Jovanovic, D.4
-
22
-
-
33845426952
-
Two dimensional quantum mechanical modelling of nanotransistors
-
Feb
-
A. Svizhenko, M. P. Anantram, T. R. Govindan, B. Biegel, and R. Venugopal, "Two dimensional quantum mechanical modelling of nanotransistors," J. Apps. Phys., vol. 91, no. 4, pp. 2343-2354, Feb. 2002.
-
(2002)
J. Apps. Phys.
, vol.91
, Issue.4
, pp. 2343-2354
-
-
Svizhenko, A.1
Anantram, M.P.2
Govindan, T.R.3
Biegel, B.4
Venugopal, R.5
-
23
-
-
33845732265
-
Erratum: Twodimensional quantum mechanical modelling of nanotransistors
-
Dec
-
M. P. Anantram, A. Svizhenko, and A. Martinez, "Erratum: Twodimensional quantum mechanical modelling of nanotransistors," J. App. Phys., vol. 100, no. 11, p. 119 903, Dec. 2006.
-
(2006)
J. App. Phys.
, vol.100
, Issue.11
, pp. 119-903
-
-
Anantram, M.P.1
Svizhenko, A.2
Martinez, A.3
-
24
-
-
33745711573
-
A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonons interaction
-
Jun
-
S. Jin, Y.-J. Park, and H. S. Min, "A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonons interaction," J. Appl. Phys., vol. 99, no. 12, pp. 123 719-1-123 719-10, Jun. 2006.
-
(2006)
J. Appl. Phys.
, vol.99
, Issue.12
, pp. 1237191-12371910
-
-
Jin, S.1
Park, Y.-J.2
Min, H.S.3
-
25
-
-
21844436489
-
Quantum transport equation for electric and magnetic fields
-
Jan
-
G. Mahan, "Quantum transport equation for electric and magnetic fields," Phys. Rep., vol. 145, no. 5, pp. 251-318, Jan. 1987.
-
(1987)
Phys. Rep.
, vol.145
, Issue.5
, pp. 251-318
-
-
Mahan, G.1
-
26
-
-
77954032817
-
A comparison between a fully-3D real-space versus coupled mode-space NEGF in the study of variability in gate-all-around Si nanowire MOSFET
-
A. Martinez, N. Seoane, A. R. Brown, and A. Asenov, "A comparison between a fully-3D real-space versus coupled mode-space NEGF in the study of variability in gate-all-around Si nanowire MOSFET," Proc. IEEE SISPAD, p. 194, 2009.
-
(2009)
Proc. IEEE SISPAD
, pp. 194
-
-
Martinez, A.1
Seoane, N.2
Brown, A.R.3
Asenov, A.4
-
27
-
-
50249161949
-
Investigation of nanowire size dependency on TSNWFET
-
Dec
-
S. D. Suk, M. Li, Y. Y. Yeoh, K. H. Yeo, K. H. Cho, I. K. Ku, H. Cho, W. Jang, D.-W. Kim, D. Park, and W.-S. Lee, "Investigation of nanowire size dependency on TSNWFET," in IEDM Tech. Dig., Dec. 2007, pp. 891-894.
-
(2007)
IEDM Tech. Dig.
, pp. 891-894
-
-
Suk, S.D.1
Li, M.2
Yeoh, Y.Y.3
Yeo, K.H.4
Cho, K.H.5
Ku, I.K.6
Cho, H.7
Jang, W.8
Kim, D.-W.9
Park, D.10
Lee, W.-S.11
|