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Volumn 58, Issue 8, 2011, Pages 2209-2217

Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors

Author keywords

Discrete random dopants; non equilibrium green function; phonon scattering; quantum transport; silicon nanowire transistors; surface roughness

Indexed keywords

CHANNEL LENGTH; CROSS SECTION; ELECTRON TRANSPORT; ELECTROSTATIC INTEGRITY; EQUIVALENT CHANNELS; GATE-ALL-AROUND; NON-EQUILIBRIUM GREEN FUNCTIONS; NON-EQUILIBRIUM GREEN'S FUNCTION FORMALISM; QUANTUM TRANSPORT; RANDOM DOPANTS; REAL-SPACE; SILICON NANOWIRE TRANSISTORS; STATISTICAL VARIABILITY; TWO SOURCES;

EID: 79960848133     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2157929     Document Type: Review
Times cited : (71)

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