Electron-phonon scattering in Si and Ge: From bulk to nanodevices

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2011, Pages 47-50

  Rideau, D ^a   Zhang, W ^b   Niquet, Y M ^c   Delerue, C ^b   Tavernier, C ^a   Jaouen, H ^a  

^a STMICROELECTRONICS   (France)

^b Institut Superieur de l'Electronique et du Numerique   (France)

^c L Sim   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON PHONON SCATTERING; EXPERIMENTAL DATA; NANO-DEVICES; SI NANOWIRE; TEMPERATURE DEPENDENCE; TIGHT BINDING MODEL; VALENCE-FORCE FIELD MODEL;

ELECTRON DIFFRACTION; ELECTRON SCATTERING; ELECTRON-PHONON INTERACTIONS; GERMANIUM; NANOWIRES; PHONON SCATTERING; SEMICONDUCTOR DEVICES; SILICON;

SEMICONDUCTING SILICON;

EID: 80054974004     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2011.6035046     Document Type: Conference Paper

References (31)

1. V. Schmidt, J. V. Wittemann, and U. Gösele, Chem. Rev. 110, 361 (2010).
2. G. Pei, J. Kedsierski, P. Oldiges, M. Ieong, and E. C. C. Kan, IEEE Trans. Electron Devices 49, 1411 (2002).
3. P. Colinge, Solid-State Electron. 48, 897 (2004).
4. S. D. Suk, S.-Y. Lee, S.-M. Kim, E.-J. Yoon, M.-S. Kim, M. Li, C. W. Oh, K. H. Yeo, S. H. Kim, D.-S. Shin, K.-H. Lee, H. S. Park, J. N. Han, C. J. Park, J.-B. Park, D.-W. Kim, D. Park, and B.-I. Ryu, IEDM Tech. Digest 2005, 717 (2005).
5. C. Dupré, A. Hubert, S. Bécu, M. Jublot, V. Maffini-Alvaro, C. Vizioz, F. Aussenac, C. Arvet, S. Barnola, J.-M. Hartmann, G. Garnier, F. Allain, J.-P. Colonna, M. Rivoire, L. Baud, S. Pauliac, V. Loup, P. Rivallin, B. Guillaumot, G. Ghibaudo, O. Faynot, T. Ernst, and S. Deleonibus, IEDM Tech. Digest 2008, 749 (2008).
6. R. M. Y. Ng, T. Wang, F. Liu, X. Zuo, J. He, and M. Chan, IEEE Electron Device Lett. 30, 520 (2009).
7. V. A. Fonoberov and A. A. Balandin, Nano Lett. 6, 2442 (2006).
8. M. V. Fernández-Serra, Ch. Adessi, and X. Blase, Phys. Rev. Lett. 96, 166805 (2006).
9. T. Markussen, R. Rurali, A.-P. Jauho, and M. Brandbyge, Phys. Rev. Lett. 99, 076803 (2007).
10. M. P. Persson, A. Lherbier, Y M. Niquet, F. Triozon, and S. Roche, Nano Letters 8, 4146 (2008).
11. R. Rurali, T. Markussen, M. Brandbyge, and A.-P. Jauho, Nano Lett. 8, 2825 (2008).
12. E. B. Ramayya, D. Vasileska, S.M. Goodnick, I. Knezevic, J. Appl. Phys. 104, 063711 (2008).
13. M. Luisier and G. Klimeck, Phys. Rev. B 80, 155430 (2009).
14. F. Murphy-Armando, G. Fagas, and J. C. Greer, Nano Lett. 10, 869 (2010).
15. M. Bescond, M. Lannoo, L. Raymond, and F. Michelini, J. Appl. Phys. 107, 093703 (2010).
16. M. P. Persson, H. Mera, Y. M. Niquet, C. Delerue, and M. Diarra, Phys. Rev. B 82, 115318(2010).
17. W. Zhang, C. Delerue, Y. M. Niquet, G. Allan, and E. Wang, Phys. Rev. B 82, 115319 (2010).
18. E. Pop et al., J. Appl. Phys. 96, 4998 (2004).
19. A. Abramo et al., IEEE. Trans. Electron Devices 41, 1646 (1994).
20. M. V. Fichetti and S. Laux, J. Appl. Phys. 80, 2234 (1996);
21. IEEE Trans. Elec. Device 38, 634 (1991).
22. P. H. Nguyen et al., J. Appl. Phys. 92, 5359 (2002);
23. P. H. Nguyen et al, J. Appl. Phys. 94, 375 (2003).
24. M. Michaillat et al., J. of Phys: Conference Series 193, 1 (2009);
25. M. Michaillat et al., Thin Solid Films 518, 2437 (2010).
26. T. Kunikiyo et al., J. Appl. Phys. 75, 297 (1994).
27. O. D. Restrepo et al., J. Appl. Phys. 94, 212103 (2009).
28. Y M. Niquet, D. Rideau, C. Tavernier, H. Jaouen, and X. Blase, Phys. Rev. B 79, 245201 (2009).
29. D. Vanderbilt, S. H. Taole, and S. Narasimhan, Phys. Rev. B 40, 5657 (1989).
30. T. B. Boykin, N. Kharche, and G. Klimeck, Phys. Rev. B 76, 035310 (2007).
31. J.-M. Jancu, R. Scholz, F. Beltram, and F. Bassani, Phys. Rev. B 57, 6493 (1998).