AlGaN/GaN/AlGaN double heterostructures grown on 200mm silicon (111) substrates with high electron mobility

Applied Physics Express

Volumn 5, Issue 1, 2012, Pages

  Cheng, Kai ^a   Liang, Hu ^a   Van Hove, Marleen ^a   Geens, Karen ^a   De Jaeger, Brice ^a   Srivastava, Puneet ^a   Kang, Xuanwu ^a   Favia, Paola ^a   Bender, Hugo ^a   Decoutere, Stefaan ^a   Dekoster, Johan ^a   Del Agua Borniquel, Jose Ignacio ^b   Jun, Sung Won ^c   Chung, Hua ^c  

^a IMEC   (Belgium)

^b IMEC   (Belgium)

^c APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALN NUCLEATION LAYERS; CRACK FREE; DOUBLE HETEROSTRUCTURES; GAN BUFFER LAYERS; HIGH ELECTRON MOBILITY; INTERMEDIATE LAYERS; SI(111) SUBSTRATE; SILICON (111) SUBSTRATES; VAN DER PAUW HALL MEASUREMENTS;

ALUMINUM; ELECTRON MOBILITY; GALLIUM NITRIDE; HALL MOBILITY; HETEROJUNCTIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84856044066     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.011002     Document Type: Article

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