Growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2177-2180

  Ishikawa, H ^a   Kato, M ^a   Hao, M S ^a   Egawa, T ^a   Jimbo, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FWHM OF XRC; GAN LAYERS; GROWTH OF GAN; INTERMEDIATE LAYERS; NEAR BAND EDGE EMISSIONS; OPTIMUM THICKNESS; SI SUBSTRATES; X RAY ROCKING CURVE;

CRYSTAL GROWTH; GALLIUM NITRIDE; SILICON;

SILICON WAFERS;

EID: 84875091508     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303332     Document Type: Conference Paper

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