GaN growth on 150-mm-diameter (1 1 1) Si substrates

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 198-201

  Ubukata, Akinori ^a,b   Ikenaga, Kazutada ^a,b   Akutsu, Nakao ^a,b   Yamaguchi, Akira ^a,b   Matsumoto, Koh ^a,b   Yamazaki, Toshiaki ^a,b   Egawa, Takashi ^b  

^a TAIYO NIPPON SANSO CORPORATION   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Substrates; A2. X ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; NUCLEATION; SEMICONDUCTING SILICON; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

BUFFER LAYERS; NUCLEATION LAYERS; RECIPROCAL LATTICE SPACE MAPPING (RSM); SUPERLATTICE STRUCTURE (SLS);

SEMICONDUCTOR GROWTH;

EID: 33846426096     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.147     Document Type: Article

References (13)

1. J. Christen, O. Contreras, F. Bertram, T. Riemann, F.A. Ponce, A. Dadgar, A.J. Diez, A. Krost, in; Proceedings of the 11th International Conference MOVPE (ICMOVPE-XI) (2002) Thu-P2.
2. Dadgar A., Poschenriender M., Blasing J., Contreras O., Bertram F., Riemann T., Rieher A., Kunze M., Daumiller I., Krtschil A., Diez A., Kaluza A., Modlich A., Kamp M., Christen J., Ponce F.A., Kohn E., and Krost A. J. Crystal Growth 248 (2003) 556
3. Ishikawa H., Zhao G.-Y., Nakada N., Egawa T., Jimbo T., and Umeno M. Jpn. J. Appl. Phys. 38 (1999) L492
4. Hiramatsu K., Itoh S., Amano H., Akasaki I., Kuwano N., Shiraishi T., and Oki K. J. Crystal Growth 115 (1991) 628
5. Ishihara Y., Yamamoto J., Kurimoto M., Takano T., Honda T., and Kawanishi H. Jpn. J. Appl. Phys. 38 (1999) L1296
6. Sugahara S., Lee J.S., and Ohtsuka K. Jpn. J. Appl. Phys. 43 (2004) L1595
7. Arulkumaran S., Egawa T., Matsui S., and Ishikawa H. Appl. Phys. Lett. 86 (2005) 3503
8. H. Ishikawa, M. Kato, T. Aoyama, S. Matsui, M. Hao, T. Egawa, T. Jimbo, The Institute of Electronics, Inform. and Commun. Engineers (IEICE), Technical Report ED2003-149, 2003.
9. Egawa T., Moku T., Ishikawa H., Ohtsuka K., and Jimbo T. Jpn. J. Appl. Phys. 41 (2002) L663
10. Tokunaga H., Waki I., Yamaguchi A., Akutsu N., and Matsumoto K. J. Crystal Growth 189 (1998) 519
11. Reiher A., Blasing J., Dadgar A., Diez A., and Krost A. J. Crystal Growth 248 (2003) 563
12. Wang H.-M., Zhang J.-P., Chen C.-Q., Fareed Q., Yang J.-W., and Asif Khan M. Appl. Phys. Lett. 81 (2002) 604
13. Romano L.T., Van de Walle C.G., Ager III J.W., Gotz W., and Kern R.S. J. Appl. Phys. 87 (2000) 7745