Growth mechanism of AIN by metal-organic molecular beam epitaxy

Journal of Applied Physics

Volumn 96, Issue 11, 2004, Pages 6272-6276

  Gherasoiu, I ^a   Nikishin, S ^a   Kipshidze, G ^a   Borisov, B ^a   Chandolu, A ^a   Ramkumar, C ^a   Holtz, M ^a   Temkin, H ^a  

^a Texas Tech University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA RADICALS; CATALYTIC ENHANCEMENT; FLUX PROFILING; OPTICAL REFLECTIVITY;

CHEMICAL BONDS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

ALUMINUM NITRIDE;

EID: 33845652691     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1813623     Document Type: Article

References (30)

1. R. F. Davis, A. M. Roskowski, E. A. Preble, J. S. Speck, B. Heying, J. A. Freitas, Jr., E. R. Glaser, and W. E. Carlos, Proc. IEEE 90, 993 (2002).
2. H. Markoc, Nitride Semiconductors and Devices (Springer, Heidelberg, 1999).
3. M. B. Panish and H. Temkin, Gas Source Molecular Beam Epitaxy-Growth and Properties of Phosphorus Containing III-V Heterostructures (Springer, Berlin, 1993).
4. S. A. Nikishin, et al. Appl. Phys. Lett. 75, 484 (1999).
5. F. Semond, B. Damilano, S. Ve'zian, N. Grandjean, M. Leroux, and J. Massies, Appl. Phys. Lett. 75, 82 (1999).
6. T. Li, R. P. Campion, C. T. Foxon, S. A. Rushworth, and L. M. Smith, J. Cryst. Growth 251, 499 (2003).
7. J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, V. Krishnamoorthy, S. Bharatan, K. S. Jones, and R. G. Wilson, Appl. Phys. Lett. 67, 253 (1995).
8. S. C. Jain, M. Willander, J. Narayn, and R. Van Overstraeten, Appl. Phys. Lett. 87, 965 (2000).
9. R. A. Hamm, D. Ritter, and H. Temkin, J. Vac. Sci. Technol. A 12, 2790 (1994).
10. S.S. Nikishin, S. Francoeur, and H. Temkin, Mater. Res. Soc. Symp. Proc. 639, G.6.57. p.5 (2001).
11. M. Kamp, M. Mayer, A. Pelzmann, and K. J. Ebeling, MRS Internet J. Nitride Semicond. Res. 2, 26 (1997).
12. G. S. Higashi, Y. J. Chabal, G. W. Trucks, and K. Raghavachari, Appl. Phys. Lett. 56, 656 (1990).
13. M. M. Frank et al., Appl. Phys. Lett. 83, 740 (2003).
14. M. Ishida, A. Eto, and T. Nakamura, J. Vac. Sci. Technol. A 7, 2931 (1989).
15. K. S. Stevens, A. Ohtani, M. Kinniburgh, and R. Beresford, Appl. Phys. Lett. 65, 321 (1994).
16. E. Calleja, M. A. Sanchez-Garcia, E. Monroy, F. J. Sanchez, and E. Munoz, J. Appl. Phys. 82, 4681 (1997).
17. S. Nikishin et al., J. Vac. Sci. Technol. B 19, 1409 (2001).
18. M. Mesrine, N. Grandjean, and J. Massies, Appl. Phys. Lett. 72, 350 (1998).
19. I. Vurgaftman and J. R. Meyer, J. Appl. Phys. 94, 3675 (2003).
20. Properties of advanced semiconductor materials GaN, AIN, InN, BN, SiC, and SiGe, edited by M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur (Wiley, New York, 2001).
21. T. Prokofyeva, M. Seon, J. Vanbuskirk, M. Holtz, S. A. Nikishin, N. N. Faleev, H. Temkin, and S. Zollner, Phys. Rev. B 63, 125313 (2001).
22. K. Jeganathan, T. Kitamura, M. Shimizu, and H. Okumura, Jpn. J. Appl. Phys., Part 2 41, L28 (2002).
23. N. Onojima, J. Suda, and H. Matsunami, Jpn. J. Appl. Phys., Part 2 42, L445 (2003).
24. X. Q. Shen, M. Shimizu, and H. Okumura, Jpn. J. Appl. Phys., Part 2 42, L1293 (2003).
25. D. W. Squire, C. S. Dulcey, and M. C. Lin, J. Vac. Sci. Technol. B 3, 1513 (1985).
26. G. V. Jagannathan, M. L. Andrews, and A. T. Habig, Appl. Phys. Lett. 56, 2019 (1990).
27. S. W. King, E. P. Carlson, R. J. Therrien, J. A. Christman, R. J. Nemanich, and R. F. Davis, J. Appl. Phys. 10, 5584 (1999).
28. H. Liu, D. C. Bertolet, and J. W. Rogers, Jr., Surf. Sci. 340, 88 (1995).
29. Y. Okada and J. S. Harris, Jr., J. Vac. Sci. Technol. B 14, 1725 (1996).
30. A. Sakai and T. Tatsumi, Appl. Phys. Lett. 64, 52 (1994).