Low-temperature/high-temperature AlN superlattice buffer layers for high-quality AlxGa1-xN on Si (1 1 1)

Journal of Crystal Growth

Volumn 311, Issue 14, 2009, Pages 3742-3748

  Saengkaew, Phannee ^a   Dadgar, Armin ^a   Blaesing, Juergen ^a   Hempel, Thomas ^a   Veit, Peter ^a   Christen, Juergen ^a   Krost, Alois ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

A1. X ray diffraction; A3. AlN superlattices; A3. MOVPE; B2. AlGaN; B2. III V materials

Indexed keywords

A1. X-RAY DIFFRACTION; A3. ALN SUPERLATTICES; A3. MOVPE; B2. ALGAN; B2. III-V MATERIALS;

BUFFER LAYERS; COMMUNICATION CHANNELS (INFORMATION THEORY); CRYSTALLINE MATERIALS; DEFECT DENSITY; DIFFRACTION; GALLIUM; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; REFLECTION; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

ALUMINUM;

EID: 67649880516     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.04.038     Document Type: Article

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