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Optical Materials

Volumn 32, Issue 9, 2010, Pages 956-960

Optical and structural properties of silicon nitride thin films prepared by ion-assisted deposition

(2) Ku, Shih Liang a Lee, Cheng Chung a

a NATIONAL CENTRAL UNIVERSITY (Taiwan)

Author keywords

Composition; IAD; Optical constants; Silicon nitride

Indexed keywords

CHEMICAL ANALYSIS; ENERGY GAP; FILM PREPARATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION BEAM ASSISTED DEPOSITION; IONS; MOLECULAR BEAM EPITAXY; NITRIDES; OPTICAL BAND GAPS; OPTICAL CONSTANTS; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; SPECTROMETRY; SPUTTERING; THIN FILMS;

CONDENSED STRUCTURES; EXTINCTION COEFFICIENTS; FOURIER TRANSFORM INFRARED SPECTROMETRY; HIGH REFRACTIVE INDEX; ION ASSISTED DEPOSITION; SILICON NITRIDE THIN FILMS; STRUCTURAL AND OPTICAL PROPERTIES; X-RAY PHOTOELECTRON SPECTROMETRIES;

OPTICAL FILMS;

EID: 84855444986 PISSN: 09253467 EISSN: None Source Type: Journal
DOI: 10.1016/j.optmat.2010.01.032 Document Type: Article

Times cited : (28)

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