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Volumn 35, Issue 19, 1996, Pages 3620-3626

Effects of bombardment on optical properties during the deposition of silicon nitride by reactive ion-beam sputtering

Author keywords

Hard coating; Ion assist; Optical coating; Optical constants; Sputtering; Thin film

Indexed keywords


EID: 0001435532     PISSN: 1559128X     EISSN: 21553165     Source Type: Journal    
DOI: 10.1364/AO.35.003620     Document Type: Article
Times cited : (40)

References (23)
  • 2
    • 84975646111 scopus 로고
    • Ion beam sputtered (SiO^ (Si3 N4)1-x antireflection coatings on laser facets produced using O2-N2 discharges
    • 2 discharges,’Appl. Opt. 29, 5074-5079 (1990).
    • (1990) Appl. Opt , vol.29 , pp. 5074-5079
    • Katagiri, Y.1    Ukita, H.2
  • 4
    • 4143149341 scopus 로고
    • Plasma enhanced chemical vapour deposited silicon and silicon dioxide films for indium phosphide MISFET technology
    • J. J. Pouch and S. A. Alterovitz, eds., Vols., of Materials Science Forum (Trans Tech Publications, Aedermannsdorf, Switzerland
    • M. Shokrani and V. J. Kapoor, ‘Plasma enhanced chemical vapour deposited silicon and silicon dioxide films for indium phosphide MISFET technology,’in Plasma Properties, Deposition and Etching, J. J. Pouch and S. A. Alterovitz, eds., Vols. 140-142 of Materials Science Forum (Trans Tech Publications, Aedermannsdorf, Switzerland, 1993), pp. 285-300.
    • (1993) Plasma Properties, Deposition and Etching , vol.140-142 , pp. 285-300
    • Shokrani, M.1    Kapoor, V.J.2
  • 5
    • 0026188192 scopus 로고
    • Materials Science Reports 6 (North Holland, Amsterdam
    • J. K. Hirvonen, Ion Beam Assisted Thin Film Deposition, Materials Science Reports 6 (North Holland, Amsterdam, 1991), pp. 215-227.
    • (1991) Ion Beam Assisted Thin Film Deposition , pp. 215-227
    • Hirvonen, J.K.1
  • 6
    • 0020720801 scopus 로고
    • Low temperature deposition of silicon nitride by reactive ion-beam sputtering
    • D. Bouchier, G. Gautherin, C. Schwebel, and A. Bossesbouef, ‘Low temperature deposition of silicon nitride by reactive ion-beam sputtering,’ J. Electrochem. Soc. 130, 638-644 (1983).
    • (1983) J. Electrochem. Soc. , vol.130 , pp. 638-644
    • Bouchier, D.1    Gautherin, G.2    Schwebel, C.3    Bossesbouef, A.4
  • 7
    • 0020767045 scopus 로고
    • Ion beam reactively sputtered silicon nitride coatings
    • A. Grill, ‘Ion beam reactively sputtered silicon nitride coatings,’ Vacuum 33, 329-332 (1983).
    • (1983) Vacuum , vol.33 , pp. 329-332
    • Grill, A.1
  • 8
    • 0026189827 scopus 로고
    • Annealing effect on mechanical stress in reactive ion-beam sputter-deposited silicon nitride films
    • A. Fourrier, A. Bosseboeuf, D. Bouchier, and G. Gautherin, ‘Annealing effect on mechanical stress in reactive ion-beam sputter-deposited silicon nitride films,’ Jpn. J. Appl. Phys. 30(7), 1469-1474 (1991).
    • (1991) Jpn. J. Appl. Phys. , vol.30 , Issue.7 , pp. 1469-1474
    • Fourrier, A.1    Bosseboeuf, A.2    Bouchier, D.3    Gautherin, G.4
  • 9
    • 36449007810 scopus 로고
    • Effect of reactive-ion bombardment on the properties of silicon nitride and oxynitride films deposited by ion-beam sputtering
    • S. K. Ray, S. Das, C. K. Maiti, S. K. Lahiri, and N. B. Chakraborti, ‘Effect of reactive-ion bombardment on the properties of silicon nitride and oxynitride films deposited by ion-beam sputtering,’J. Appl. Phys. 75, 8145-8152 (1994).
    • (1994) J. Appl. Phys , vol.75 , pp. 8145-8152
    • Ray, S.K.1    Das, S.2    Maiti, C.K.3    Lahiri, S.K.4    Chakraborti, N.B.5
  • 10
    • 6044275199 scopus 로고
    • Substrate temperature effects on the properties of silicon nitride films deposited by ion beam assisted deposi-tion,’Mater
    • E. P. Donovan, C. A. Carosella, K. S. Grabowski, and W. D. Coleman, ‘Substrate temperature effects on the properties of silicon nitride films deposited by ion beam assisted deposi-tion,’Mater. Res. Soc. Symp. Proc. 201, 111-116 (1991).
    • (1991) Res. Soc. Symp. Proc , vol.201 , pp. 111-116
    • Donovan, E.P.1    Carosella, C.A.2    Grabowski, K.S.3    Coleman, W.D.4
  • 11
    • 84955036393 scopus 로고
    • Fundamentals of ion-beam-assisted deposition. Absolute calibration of ion and evaporant fluxes
    • G. K. Hubler, D. Van Vechten, E. P. Donvan, and C. A. Carosella, ‘Fundamentals of ion-beam-assisted deposition. Absolute calibration of ion and evaporant fluxes,’ J. Vac. Sci. Technol. A 8(2), 831-839 (1990).
    • (1990) J. Vac. Sci. Technol. A , vol.8 , Issue.2 , pp. 831-839
    • Hubler, G.K.1    Van Vechten, D.2    Donvan, E.P.3    Carosella, C.A.4
  • 15
    • 0020940620 scopus 로고
    • Determination of the thickness and optical constants of amorphous silicon
    • R. Swanepoel, ‘Determination of the thickness and optical constants of amorphous silicon,’ J. Phys. E 16, 1214-1222 (1983).
    • (1983) J. Phys. E , vol.16 , pp. 1214-1222
    • Swanepoel, R.1
  • 16
    • 0347949463 scopus 로고
    • Infrared reflectance properties of surface thin films
    • Y. S. Yen and J. S. Wong, ‘Infrared reflectance properties of surface thin films,’J. Phys. Chem. 93, 7208-7216 (1987).
    • (1987) J. Phys. Chem , vol.93 , pp. 7208-7216
    • Yen, Y.S.1    Wong, J.S.2
  • 17
    • 21844501701 scopus 로고
    • Influence of charge exchange on ion/neutral arrival rates in an ion-assisted deposition system
    • J-K. Kim, H. Kheyrandish, and J. S. Colligon, ‘Influence of charge exchange on ion/neutral arrival rates in an ion-assisted deposition system,’ J. Vac. Sci. Technol. A 12, 2733-2738 (1994).
    • (1994) J. Vac. Sci. Technol. A , vol.12 , pp. 2733-2738
    • Kim, J.-K.1    Kheyrandish, H.2    Colligon, J.S.3
  • 18
    • 84966867038 scopus 로고
    • Properties of amorphous silicon nitride films
    • S. M. Hu, ‘Properties of amorphous silicon nitride films,’ J. Electrochem. Soc. 113, 693-698 (1966).
    • (1966) J. Electrochem. Soc. , vol.113 , pp. 693-698
    • Hu, S.M.1
  • 19
    • 0012048316 scopus 로고
    • Hydrogen-free SiN films deposited by ion beam sputtering
    • M. Kitabake and K. Wasa, ‘Hydrogen-free SiN films deposited by ion beam sputtering,’Appl. Phys. Lett. 49, 927-929 (1986).
    • (1986) Appl. Phys. Lett , vol.49 , pp. 927-929
    • Kitabake, M.1    Wasa, K.2
  • 20
    • 0027555582 scopus 로고
    • Elementary chemical-reaction processes on silicon surfaces
    • J. Yoshinobu, S-I. Tanaka, and M. Nishijima, ‘Elementary chemical-reaction processes on silicon surfaces,’ Jpn. J. Appl. Phys. 32, 1171-1181 (1993).
    • (1993) Jpn. J. Appl. Phys. , vol.32 , pp. 1171-1181
    • Yoshinobu, J.1    Tanaka, S.-I.2    Nishijima, M.3
  • 21
    • 0001291726 scopus 로고
    • Electron energy-loss spectra of Si(111) reacted with nitrogen atoms
    • K. Edamoto, S. Tanaka, M. Onchi, and M. Nishijima, ‘Electron energy-loss spectra of Si(111) reacted with nitrogen atoms,’ Surf. Sci. 167, 285-296 (1986).
    • (1986) Surf. Sci. , vol.167 , pp. 285-296
    • Edamoto, K.1    Tanaka, S.2    Onchi, M.3    Nishijima, M.4
  • 23
    • 84975645786 scopus 로고
    • Synthesis of silicon nitride and silicon oxide films by ion-assisted deposi-tion
    • R. P. Netterfield, P. J. Martin, and W. G. Sainty, ‘Synthesis of silicon nitride and silicon oxide films by ion-assisted deposi-tion,’Appl. Opt. 25, 3808-3809 (1986).
    • (1986) Appl. Opt. , vol.25 , pp. 3808-3809
    • Netterfield, R.P.1    Martin, P.J.2    Sainty, W.G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.