SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Journal of the Electrochemical Society

Volumn 157, Issue 6, 2010, Pages

Effects of photoelectrochemical etching of n-polar and Ga-polar gallium nitride on sapphire substrates

(5) Jung, Younghun a Baik, Kwang Hyeon b Ren, Fan c Pearton, Stephen J c Kim, Jihyun a

a Korea University (South Korea)

b Korea Electronic Technology Institute (KETI) (South Korea)

c J Crayton Pruitt Family Department of Biomedical Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAN LAYERS; KOH SOLUTION; PHOTO-ELECTROCHEMICAL ETCHING; SAPPHIRE SUBSTRATES; SCATTERING EVENTS; SHARP CONTRAST; SURFACE-TEXTURING;

ELECTROCHEMICAL ETCHING; GALLIUM NITRIDE; LIGHT EMITTING DIODES; PHOTONIC DEVICES; POTASSIUM HYDROXIDE; SAPPHIRE;

GALLIUM ALLOYS;

EID: 77958601349 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3384713 Document Type: Article

Times cited : (43)

References (21)

1
- 28444495636
- World Scientific, Singapore.
- M. S. Shur and R. F. Davis, GaN-based Materials and Devices: Growth, Fabrication, Characterization and Performance, World Scientific, Singapore (2004).
- (2004) GaN-based Materials and Devices: Growth, Fabrication, Characterization and Performance
- Shur, M.S.¹ Davis, R.F.²

2
- 0003751292
- S. Nakamura and S. F. Chichibu, Editors, Taylor and Francis, London.
- Introduction to Nitride Semiconductor Blue Lasers and Light-Emitting Diodes, S. Nakamura, and, S. F. Chichibu, Editors, Taylor and Francis, London (2000).
- (2000) Introduction to Nitride Semiconductor Blue Lasers and Light-Emitting Diodes

3
- 0004167140
- Springer, Berlin.
- H. Morko̧, Nitride Semiconductors and Devices, Springer, Berlin (1999).
- (1999) Nitride Semiconductors and Devices
- Morko̧, H.¹

4
- 0004253118
- John Wiley & Sons, New York.
- M. Fukuda, Optical Semiconductor Devices, John Wiley & Sons, New York (1999).
- (1999) Optical Semiconductor Devices
- Fukuda, M.¹

5
- 0742268937
- JAPLD8 0021-4922,. 10.1143/JJAP.42.L1405
- H. M. Ng, W. Parz, N. G. Weimann, and A. Chowdhury, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922, 42, L1405 (2003). 10.1143/JJAP.42.L1405
- (2003) Jpn. J. Appl. Phys., Part 2 , vol.42 , pp. 1405
- Ng, H.M.¹ Parz, W.² Weimann, N.G.³ Chowdhury, A.⁴

6
- 2542475234
- APPLAB 0003-6951,. 10.1063/1.1719281
- Y. Gao, M. D. Craven, J. S. Speck, S. P. DenBaars, and E. L. Hu, Appl. Phys. Lett. APPLAB 0003-6951, 84, 3322 (2004). 10.1063/1.1719281
- (2004) Appl. Phys. Lett. , vol.84 , pp. 3322
- Gao, Y.¹ Craven, M.D.² Speck, J.S.³ Denbaars, S.P.⁴ Hu, E.L.⁵

7
- 77958518584
- last accessed March 10.
- http://global.kyocera.com/prdct/fc/sapphire/, last accessed March 10, 2010.
- (2010)

8
- 66549100702
- IPTLEL 1041-1135,. 10.1109/LPT.2009.2016669
- B. J. Kim, H. Jung, S. H. Kim, J. Bang, and J. Kim, IEEE Photon. Technol. Lett. IPTLEL 1041-1135, 21, 700 (2009). 10.1109/LPT.2009.2016669
- (2009) IEEE Photon. Technol. Lett. , vol.21 , pp. 700
- Kim, B.J.¹ Jung, H.² Kim, S.H.³ Bang, J.⁴ Kim, J.⁵

9
- 27744555240
- Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns
- DOI 10.1063/1.2132073, 203508
- D. H. Kim, C. O. Cho, Y. G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, Appl. Phys. Lett. APPLAB 0003-6951, 87, 203508 (2005). 10.1063/1.2132073 (Pubitemid 41611443)
- (2005) Applied Physics Letters , vol.87 , Issue.20 , pp. 1-3
- Kim, D.-H.¹ Cho, C.-O.² Roh, Y.-G.³ Jeon, H.⁴ Park, Y.S.⁵ Cho, J.⁶ Im, J.S.⁷ Sone, C.⁸ Park, Y.⁹ Choi, W.J.¹⁰ Park, Q.-H.¹¹

10
- 58349099035
- APPLAB 0003-6951,. 10.1063/1.3067837
- T. A. Truong, L. M. Campos, E. Matioli, I. Meinel, C. J. Hawker, C. Weisbuch, and P. M. Petroff, Appl. Phys. Lett. APPLAB 0003-6951, 94, 023101 (2009). 10.1063/1.3067837
- (2009) Appl. Phys. Lett. , vol.94 , pp. 023101
- Truong, T.A.¹ Campos, L.M.² Matioli, E.³ Meinel, I.⁴ Hawker, C.J.⁵ Weisbuch, C.⁶ Petroff, P.M.⁷

11
- 1542315187
- APPLAB 0003-6951,. 10.1063/1.1645992
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. APPLAB 0003-6951, 84, 855 (2004). 10.1063/1.1645992
- (2004) Appl. Phys. Lett. , vol.84 , pp. 855
- Fujii, T.¹ Gao, Y.² Sharma, R.³ Hu, E.L.⁴ Denbaars, S.P.⁵ Nakamura, S.⁶

12
- 67649101560
- APPLAB 0003-6951,. 10.1063/1.3144270
- W. Hu, B. Ma, D. Li, H. Miyake, and K. Hiramatsu, Appl. Phys. Lett. APPLAB 0003-6951, 94, 231102 (2009). 10.1063/1.3144270
- (2009) Appl. Phys. Lett. , vol.94 , pp. 231102
- Hu, W.¹ Ma, B.² Li, D.³ Miyake, H.⁴ Hiramatsu, K.⁵

13
- 76449100118
- APPLAB 0003-6951,. 10.1063/1.3301262
- J. J. Wierer, Jr., A. J. Fischer, and D. D. Koleske, Appl. Phys. Lett. APPLAB 0003-6951, 96, 051107 (2010). 10.1063/1.3301262
- (2010) Appl. Phys. Lett. , vol.96 , pp. 051107
- Wierer Jr., J.J.¹ Fischer, A.J.² Koleske, D.D.³

14
- 33746954608
- Pyramidal texturing of silicon solar cell with TMAH chemical anisotropic etching
- DOI 10.1016/j.solmat.2006.03.005, PII S092702480600095X
- P. Papet, O. Nichiporuk, A. Kaminski, Y. Rozier, J. Kraiem, J. -F. Lelievre, A. Chaumartin, A. Fave, and M. Lemiti, Sol. Energy Mater. Sol. Cells SEMCEQ 0927-0248, 90, 2319 (2006). 10.1016/j.solmat.2006.03.005 (Pubitemid 44202504)
- (2006) Solar Energy Materials and Solar Cells , vol.90 , Issue.15 , pp. 2319-2328
- Papet, P.¹ Nichiporuk, O.² Kaminski, A.³ Rozier, Y.⁴ Kraiem, J.⁵ Lelievre, J.-F.⁶ Chaumartin, A.⁷ Fave, A.⁸ Lemiti, M.⁹

15
- 36449006093
- Room-temperature photoenhanced wet etching of GaN
- DOI 10.1063/1.115689, PII S0003695196042118
- M. S. Minsky, M. White, and E. L. Hu, Appl. Phys. Lett. APPLAB 0003-6951, 68, 1531 (1996). 10.1063/1.115689 (Pubitemid 126688306)
- (1996) Applied Physics Letters , vol.68 , Issue.11 , pp. 1531-1533
- Minsky, M.S.¹ White, M.² Hu, E.L.³

16
- 0001069324
- APPLAB 0003-6951,. 10.1063/1.119365
- C. Youtsey, I. Adesida, and G. Bulman, Appl. Phys. Lett. APPLAB 0003-6951, 71, 2151 (1997). 10.1063/1.119365
- (1997) Appl. Phys. Lett. , vol.71 , pp. 2151
- Youtsey, C.¹ Adesida, I.² Bulman, G.³

17
- 0035886045
- JAPIAU 0021-8979,. 10.1063/1.1402966
- D. Li, M. Sumiya, S. Fuke, D. Yang, D. Que, Y. Suzuki, and Y. Fukuda, J. Appl. Phys. JAPIAU 0021-8979, 90, 4219 (2001). 10.1063/1.1402966
- (2001) J. Appl. Phys. , vol.90 , pp. 4219
- Li, D.¹ Sumiya, M.² Fuke, S.³ Yang, D.⁴ Que, D.⁵ Suzuki, Y.⁶ Fukuda, Y.⁷

18
- 0041339846
- JAPIAU 0021-8979,. 10.1063/1.1582233
- H. M. Ng, N. G. Weimann, and A. Chowdhury, J. Appl. Phys. JAPIAU 0021-8979, 94, 650 (2003). 10.1063/1.1582233
- (2003) J. Appl. Phys. , vol.94 , pp. 650
- Ng, H.M.¹ Weimann, N.G.² Chowdhury, A.³

19
- 13444270826
- Wet etching of GaN, AlN, and SiC: A review
- DOI 10.1016/j.mser.2004.11.002, PII S0927796X04001251
- D. Zhuang and J. H. Edgar, Mater. Sci. Eng. R. MIGIEA 0927-796X, 48, 1 (2005). 10.1016/j.mser.2004.11.002 (Pubitemid 40211034)
- (2005) Materials Science and Engineering R: Reports , vol.48 , Issue.1
- Zhuang, D.¹ Edgar, J.H.²

20
- 69249171134
- APPLAB 0003-6951,. 10.1063/1.3206666
- S. -M. Hwang, Y. G. Seo, K. H. Baik, I. -S. Cho, J. H. Baek, S. Jung, T. G. Kim, and M. Cho, Appl. Phys. Lett. APPLAB 0003-6951, 95, 071101 (2009). 10.1063/1.3206666
- (2009) Appl. Phys. Lett. , vol.95 , pp. 071101
- Hwang, S.-M.¹ Seo, Y.G.² Baik, K.H.³ Cho, I.-S.⁴ Baek, J.H.⁵ Jung, S.⁶ Kim, T.G.⁷ Cho, M.⁸

21
- 51149220122
- APPLAB 0003-6951,. 10.1063/1.110575
- I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, Appl. Phys. Lett. APPLAB 0003-6951, 63, 2174 (1993). 10.1063/1.110575
- (1993) Appl. Phys. Lett. , vol.63 , pp. 2174
- Schnitzer, I.¹ Yablonovitch, E.² Caneau, C.³ Gmitter, T.J.⁴ Scherer, A.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.