Enhanced light extraction of nonpolar a-plane (11-20) GaN light emitting diodes on sapphire substrates by photo-enhanced chemical wet etching

Optics Express

Volumn 18, Issue 9, 2010, Pages 9728-9732

  Jung, Younghun ^a   Kim, Jihyun ^a   Jang, Soohwan ^b   Baik, Kwang Hyeon ^c   Seo, Yong Gon ^c   Hwang, Sung Min ^c  

^a Korea University   (South Korea)

^b Dankook University   (South Korea)

^c Korea Electronic Technology Institute (KETI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; SAPPHIRE;

A-PLANE; A-PLANE GAN; CHEMICAL WET ETCHING; CONTROL SAMPLES; ETCHING MORPHOLOGIES; EXTRACTION EFFICIENCIES; GAN LEDS; GAN LIGHT-EMITTING DIODES; LIGHT EXTRACTION; MESA SIDEWALL; NON-POLAR; OUTPUT POWER; PHOTOENHANCED; PRISMATIC PLANES; RADIATION PATTERNS; SAPPHIRE SUBSTRATES; SUBMICRON-SIZED; TRIGONAL PRISMS; UNIQUE FEATURES;

WET ETCHING;

EID: 77952031206     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.009728     Document Type: Article

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