SCOPUS 정보 검색 플랫폼

Volumn 95, Issue 7, 2009, Pages

Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3 PO4

(13) Qi, S L a Chen, Z Z a Fang, H a Sun, Y J a Sang, L W a Yang, X L a Zhao, L B a Tian, P F a Deng, J J a Tao, Y B a Yu, T J a Qin, Z X a Zhang, G Y a

a PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BASE PLANE; ETCHING PROCESS; ETCHING TEMPERATURE; FORMATION MECHANISM; LASER LIFT-OFF; LIGHT OUTPUT POWER; METALORGANIC CHEMICAL VAPOR DEPOSITION; OBLIQUE ANGLES; ROUGHENED SURFACES; TEMPERATURE INCREASE; THERMODYNAMICS AND KINETICS; TIME EVOLUTIONS;

ACTIVATION ENERGY; ETCHING; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT TRANSMISSION; SEMICONDUCTING GALLIUM;

SURFACE MORPHOLOGY;

EID: 69249165856 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3211970 Document Type: Article

Times cited : (42)

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