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Journal of the Electrochemical Society

Volumn 156, Issue 10, 2009, Pages

Photoelectrochemical undercut etching of m-Plane GaN for microdisk applications

(5) Tamboli, Adele C a Schmidt, Mathew C a Hirai, Asako a Denbaars, Steven P a Hu, Evelyn L a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; DEVICE APPLICATION; EPITAXIAL STRUCTURE; ETCHANT CONCENTRATIONS; ILLUMINATION INTENSITY; IN-PLANE POLARIZATION; M-PLANE; MASKING MATERIAL; MICRODISK LASER; MICRODISKS; NON-POLAR; NONPOLAR M-PLANE; OPTICAL CAVITIES; PHOTO-ELECTROCHEMICAL ETCHING; PHOTOELECTROCHEMICALS; QUANTUM CONFINED STARK EFFECT; UNDERCUT ETCHING;

GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT TRANSMISSION; OPTICAL INSTRUMENTS; SEMICONDUCTING GALLIUM; SPECTROSCOPY; VIDEODISKS;

ETCHING;

EID: 69549105974 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3184156 Document Type: Article

Times cited : (16)

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