Impact of firing on surface passivation of p-Si by SiO 2/Al and SiO 2/SiN x/Al stacks

Journal of Applied Physics

Volumn 110, Issue 12, 2011, Pages

  Chen, J ^a,b   Cornagliotti, E ^c   Loozen, X ^c   Simoen, E ^c   Vanhellemont, J ^a   Lauwaert, J ^a   Vrielinck, H ^a   Poortmans, J ^c  

^a GHENT UNIVERSITY   (Belgium)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AL FILMS; ATOMIC HYDROGEN; CO-FIRING; FIXED CHARGES; INSULATOR LAYER; INTERFACE STATE; MIS CAPACITORS; REAR SURFACES; SURFACE PASSIVATION;

ALUMINUM; COBALT; HYDROGEN; METALLIC FILMS; PASSIVATION; SILICON NITRIDE;

ACTIVATION ENERGY;

EID: 84855303714     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3669405     Document Type: Article

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