Comprehensive study of rapid, low-cost silicon surface passivation technologies

IEEE Transactions on Electron Devices

Volumn 47, Issue 5, 2000, Pages 987-993

  Rohatgi, A ^a   Doshi, P ^d   Moschner, J ^d   Lauinger, T ^d   Aberle, A G ^e   Ruby, D S ^f  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

^c INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^d University of New South Wales ^*

^e UNIVERSITY OF NEW SOUTH WALES   (Australia)

^f SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Passivation; Rapid thermal oxide; Silicon; Silicon nitride; Solar cells; Suface

Indexed keywords

EID: 0001610131     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.841230     Document Type: Article

References (22)

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