A DLTS study of SiO2 and SiO2/SiNx Bi-layer surface passivation of silicon

ECS Transactions

Volumn 33, Issue 11, 2010, Pages 145-153

  Simoen, E ^a   Gong, C ^a,b   Posthuma, N E ^a   Van Kerschaver, E ^a,c   Poortmans, J ^a,b   Mertens, R ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c Now with Solexel Inc ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM METALLOGRAPHY; BISMUTH COMPOUNDS; DEEP LEVEL TRANSIENT SPECTROSCOPY; INTERFACE STATES; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; PASSIVATION; PHASE INTERFACES; SILICA; SILICON OXIDES; SUBSTRATES;

BI-LAYER; CRYSTALLINE SILICONS; FORMING GAS ANNEALING; METAL-OXIDE- SEMICONDUCTORCAPACITORS; P-TYPE SUBSTRATES; SI/SIO2 INTERFACE; STATE DISTRIBUTIONS; SURFACE PASSIVATION;

IODINE COMPOUNDS;

EID: 84855319195     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3485689     Document Type: Conference Paper

References (32)

1. M.J. Kerr, J. Schmidt, A. Cuevas and J.H. Bultman, J. Appl. Phys., 89, 3821 (2001).
2. J. Schmidt, M. Kerr and A. Cuevas, Semicond. Sci. Technol., 16, 164 (2001).
3. D. Hiller, R. Zierold, J. Bachmann, M. Alexe, Y. Yang, J.W. Gerlach, A. Stesmans, M. Jivanescu, U. Müller, J. Vogt, H. Hilmer, P. Löper, M. Künle, F. Munnik, K. Nielsch and M. Zacharias, J. Appl. Phys., 107, 064314 (2010).
4. W.C. Sun, W.L. Chang, C.H. Chen, C.H. Du, T.Y. Wang, T. Wang and C.W. Lan, Electrochem. and Solid-St. Lett., 12, H388 (2009).
5. H. Jin, K.J. Weber and P.J. Smith, J. Electrochem. Soc., 154, H417 (2007).
6. A. Aberle, S. Glunz and W. Warta, Sol. Energy Mater. Sol. Cells, 29, 175 (1993).
7. Y. Bai, J.E. Phillips and A.M. Barnett, IEEE Trans. Electron Devices, 45, 1784 (1998).
8. K.L. Wang and A.O. Evwaraye, J. Appl. Phys., 47, 4574 (1976).
9. M. Schulz and N.M. Johnson, Appl. Phys. Lett., 31, 622 (1977).
10. K.L. Wang, J. Electrochem. Soc., 125, 1664 (1978).
11. T.J. Tredwell and C.R. Viswanathan, Solid-St. Electron., 23, 1171 (1980).
12. A.G. Aberle, S. Glunz and W. Warta, J. Appl. Phys., 71, 4422 (1992).
13. S. Özder, I. Atilgan and B. Katircioǧlu, Semicond. Sci. Technol., 10, 1510 (1995).
14. E. Rosencher and D. Bois, Electron. Lett., 18, 546 (1982).
15. D. Vuillaume and J.C. Bourgoin, J. Appl. Phys., 58, 2077 (1985).
16. G. Van den bosch, G.V. Groeseneken, P. Heremans and H.E. Maes, IEEE Trans. Electron Devices, 38, 1820 (1991).
17. J.L. Autran, F. Seigneur, C. Plossu and B. Balland, J. Appl. Phys., 74, 3932 (1993).
18. N.M. Johnson, Appl. Phys. Lett., 34, 802 (1979).
19. K. Yamasaki, M. Yoshida and T. Sugano, Jpn. J. Appl. Phys., 18, 113 (1979).
20. C. Gong, E. Simoen, N. Posthuma, E. Van Kerschaver, J. Poortmans and R. Mertens, Appl. Phys. Lett., 96, 103507 (2010).
21. D. Vuillaume, J.C. Bourgoin and M. Lannoo, Phys. Rev. B. 34, 1171 (1986).
22. H. Lakhdari, D. Vuillaume and J.C. Bourgoin, Phys. Rev. B, 38, 13124 (1988).
23. D. Bauza, J. Appl. Phys., 84, 6178 (1998).
24. D. Vuillaume, D. Goguenheim and G. Vincent, Appl. Phys. Lett., 57, 1206 (1990).
25. N.O. Pearce, B. Hamilton, A.R. Peaker and R.A. Craven, J. Appl. Phys., 62, 576 (1987).
26. R. Beyer, H. Burghardt, I. Thurzo, D.R.T. Zahn and T. Geßner, Solid-St. Electron., 44, 1463 (2000).
27. S.N. Volkos, E.S. Eftymiou, S. Bernardini, I.D. Hawkins, A.R. Peaker and G. Petkos, J. Appl. Phys., 100, 124103 (2006).
28. L. Dobaczewski, S. Bernardini, P. Kruszewski, P.K. Hurley, V.P. Markevich, I.D. Hawkins and A.R. Peaker, Appl. Phys. Lett., 92, 242104 (2008).
29. E.H. Poindexter, G.J. Gerardi, M.-E. Rueckel, P.J. Caplan, N.M. Johnson and D.K. Biegelsen, J. Appl. Phys., 56, 2844 (1984).
30. H.G. Grimmeiss, W.R. Buchwald, E.H. Poindexter, P.J. Caplan, M. Harmatz, G.J. Gerardi, D.J. Keeble and N.M. Johnson, Phys. Rev. B, 39, 5175 (1989).
31. E. Cartier, J.H. Stathis and D.A. Buchanan, Appl. Phys. Lett., 63, 1510 (1993).
32. L.-Å. Ragnarsson and P. Lundgren, J. Appl. Phys., 88, 938 (2000).