Low surface recombination velocity on (100) silicon by electrochemically grown silicon dioxide annealed at low temperature

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 1002-1004

  Grant, Nicholas Ewen ^a   McIntosh, Keith R ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Annealing; electrochemical processes; passivation; silicon dioxide; surface recombination velocity (SRV)

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; ELECTROCHEMICAL PROCESS; FORMING GAS; INTERFACE STATE; INTERFACE STATE DENSITY; LOW TEMPERATURES; OXIDE CHARGE; OXIDE THICKNESS; PHOTOCONDUCTANCE; POSITIVE CHARGES; ROOM TEMPERATURE; SILICON DIOXIDE; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATION VELOCITY (SRV); THERMAL OXIDES;

ANNEALING; NITRIC ACID; OXYGEN; PASSIVATION; SILICA; SILICON SOLAR CELLS; VELOCITY;

SILICON OXIDES;

EID: 77956100357     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2052780     Document Type: Article

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