Large homogeneous mono-/bi-layer graphene on 6H-SiC(0 0 0 1) and buffer layer elimination

Journal of Physics D: Applied Physics

Volumn 43, Issue 37, 2010, Pages

  Virojanadara, C ^a   Yakimova, R ^a   Zakharov, A A ^b   Johansson, L I ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC HYDROGEN; BI-LAYER; ELECTRONICS APPLICATIONS; GRAPHENE GROWTH; GRAPHENE SHEETS; GROWTH TECHNIQUES; HIGH QUALITY; NEW PROCESS; SIC(0 0 0 1); TECHNIQUES USED; UNIFORM LAYER;

BUFFER LAYERS; EPITAXIAL GROWTH; HYDROGEN; HYDROGEN STORAGE; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SULFUR COMPOUNDS;

GRAPHENE;

EID: 78249279640     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/37/374010     Document Type: Article

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