Simulations of C 60 bombardment of Si, SiC, diamond and graphite

Applied Surface Science

Volumn 255, Issue 4, 2008, Pages 837-840

  Krantzman, Kristin D ^a   Webb, Roger P ^b   Garrison, Barbara J ^c  

^a School of Business   (United States)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

C 60 +; Carbon; Molecular dynamics simulations; Silicon; ToF SIMS

Indexed keywords

ATOMS; CARBON; DIAMONDS; GRAPHITE; MOLECULAR DYNAMICS; PROJECTILES; SECONDARY ION MASS SPECTROMETRY; SILICON; SILICON CARBIDE; SILICON COMPOUNDS; SPUTTERING;

C60^+; ENERGY DEPOSITIONS; GRAPHITE-LIKE STRUCTURES; LATTICE STRUCTURES; MOLECULAR DYNAMICS SIMULATIONS; SPUTTERING YIELDS; SUBSTRATE CHARACTERISTICS; TOF SIMS;

CRYSTAL ATOMIC STRUCTURE;

EID: 56449128414     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.05.236     Document Type: Article

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