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Volumn 99, Issue 25, 2011, Pages

Degenerate p-doping of InP nanowires for large area tunnel diodes

Author keywords

[No Author keywords available]

Indexed keywords

DIETHYL ZINC; DOPING PROFILES; ELECTRON-BEAM-INDUCED CURRENT; GATE DEPENDENCE; INP; MINORITY CARRIER DIFFUSION LENGTH; N-DOPING; P-DOPING; P-TYPE; PEAK CURRENT DENSITY; ROOM TEMPERATURE; SOURCE-DRAIN; TWO-TERMINAL DEVICES;

EID: 84555218403     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3669697     Document Type: Article
Times cited : (29)

References (31)
  • 12
    • 21544482401 scopus 로고
    • 10.1063/1.331667
    • H. J. Leamy, J. Appl. Phys. 53 (6), R51 (1982). 10.1063/1.331667
    • (1982) J. Appl. Phys. , vol.53 , Issue.6 , pp. 51
    • Leamy, H.J.1
  • 16
    • 84855751704 scopus 로고    scopus 로고
    • See supplementary material at E-APPLAB-99-076150 for methods details and high-resolution images from Fig.
    • See supplementary material at http://dx.doi.org/10.1063/1.3669697 E-APPLAB-99-076150 for methods details and high-resolution images from Fig..
  • 21
    • 0035793378 scopus 로고    scopus 로고
    • 10.1126/science.291.5505.851
    • Y. Cui and C. M. Lieber, Science 291 (5505), 851 (2001). 10.1126/science.291.5505.851
    • (2001) Science , vol.291 , Issue.5505 , pp. 851
    • Cui, Y.1    Lieber, C.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.