Time-resolved photoluminescence investigations on HfO2-capped InP nanowires

Nanotechnology

Volumn 21, Issue 10, 2010, Pages

  Munch S ^a   Reitzenstein, S ^a   Borgstrom M ^b   Thelander, C ^b   Samuelson, L ^a   Worschech, L ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED STATE; CORE/SHELL; GATE OXIDE; HIGH QUALITY; INAS; INP; INP MATERIAL; INP/GAP; INTERFACE QUALITY; LOW TEMPERATURES; MATERIAL SYSTEMS; NANOELECTRONIC DEVICES; OXIDE CAPPING; PROCESS PARAMETERS; SURFACE CAPPING; SURFACE QUALITIES; SURFACE RECOMBINATION VELOCITIES; TIME-RESOLVED PHOTOLUMINESCENCE; TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY; TIME-RESOLVED SPECTROSCOPY;

FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; HAFNIUM COMPOUNDS; LASER SPECTROSCOPY; MATERIALS SCIENCE; MESFET DEVICES; NANOWIRES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY;

SURFACE TREATMENT;

EID: 77149151611     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/10/105711     Document Type: Article

References (23)

1. Duan X F, Huang Y, Cui Y, Wang J and Lieber C M 2001 Nature 409 66
2. Algra R E, Verheijen M A, Borgström M T, Feiner L F, Immink G, van Enckevort W J P, Vlieg E and Bakkers E P A M 2008 Nature 456 369
3. Zimmler M A, Bao J, Capasso F, Müller S and Ronning C 2008 Appl. Phys. Lett. 93 051101
4. Thelander C, Fröberg L E, Rehnstedt C, Samuelson L and Wernersson L E 2008 IEEE Electron Device Lett. 29 206
5. Robertson J 2006 Rep. Prog. Phys. 69 327-96
6. Xuan Y, Lin H C and Ye P D 2006 Appl. Phys. Lett. 88 263518
7. Vagner P and Mosko M 1997 J. Appl. Phys. 81 3196
8. Li B, Slachmuylders A F, Partoens B, Magnus W and Peeters F M 2008 Phys. Rev. B 77 115335
9. Zhao H, Shahrjerdi D, Zhu F, Zhang M, Kim H S, Ok I, Yum J H, Park S I, Banerjee S K and Lee J C 2008 Appl. Phys. Lett. 92 233508
10. Eymery J, Favre-Nicolin V, Fröberg L and Samuelson L 2009 Appl. Phys. Lett. 94 131911 with supplementary information and references therein
11. Magnusson M H, Deppert K, Malm J O, Bovin J O and Samuelson L 1999 Nanostruct. Mater. 12 45
12. Borgström M T, Wallentin J, Trägrdh J, Ramvall P, Ek M, Wallenberg L R, Samuelson L and Deppert K Nano Res. at press
13. Mattila M, Hakkarainen T, Lipsanen H, Jiang H and Kauppinen E I 2007 Appl. Phys. Lett. 90 033101
14. Crankshaw S, Reitzenstein S, Chuang L C, Moewe M, Münch S, Böckler C, Forchel A and Chang-Hasnain C 2008 Phys. Rev. B 77 235409
15. Bao J, Bell D C, Capasso F, Wagner J B, Mrtensson T, Trägrdh J and Samuelson L 2008 Nano Lett. 8 836
16. Pemasiri K, et al. 2009 Nano Lett. 9 648
17. van Weert M H M, Wunnicke O, Roest A L, Eijkemans T J, Yu Silov A, Haverkort j E M, t Hooft G W and Bakkers E P A M 2006 Appl. Phys. Lett. 88 043109
18. Yablonovitch E, Sandroff C J, Bhat R and Gmitter T 1987 Appl. Phys. Lett. 51 439
19. Ogawa K, Haraguchi K, Hiruma K, Fujisaki Y, Katsuyama T and Fasol G 1992 J. Lumin. 53 387
20. Reitzenstein S, Münch S, Hofmann C, Forchel A, Crankshaw S, Chuang L C, Moewe M and Chang-Hasnain C 2007 Appl. Phys. Lett. 91 091103
21. O'Connor E, et al. 2009 Appl. Phys. Lett. 94 102902
22. Hasegawa H, Akazawa M, Ishii H and Matsuzaki K 1989 J. Vac. Sci. Technol. B 7 870
23. Lu H L, Terada Y, Shimogaki Y, Nakano Y and Sugiyama M 2009 Appl. Phys. Lett. 95 152103