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Chemical Physics Letters

Volumn 502, Issue 4-6, 2011, Pages 222-224

Dynamics of extremely anisotropic etching of InP nanowires by HCl

(5) Borgström, Magnus T a Wallentin, Jesper a Kawaguchi, Kenichi a Samuelson, Lars a Deppert, Knut a

a LUND UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION LIMITED; ETCH PROCESS; ETCHING AGENTS; GASPHASE; HIGH ASPECT RATIO; IN-SITU ETCHING; INP; NANOWIRE SYNTHESIS; PARAMETER OPTIMIZATION; PHYSISORBED;

ASPECT RATIO; NANOWIRES; SYNTHESIS (CHEMICAL);

ANISOTROPIC ETCHING;

EID: 78751649016 PISSN: 00092614 EISSN: None Source Type: Journal
DOI: 10.1016/j.cplett.2010.12.061 Document Type: Article

Times cited : (16)

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