Resonant electron tunneling through defects in GaAs tunnel diodes

Journal of Applied Physics

Volumn 104, Issue 9, 2008, Pages

  Jandieri, K ^a   Baranovskii, S D ^a   Rubel, O ^a   Stolz, W ^a   Gebhard, F ^a   Guter, W ^b   Hermle, M ^b   Bett, A W ^b  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; RESONANT TUNNELING; SEMICONDUCTING GALLIUM; TUNNEL DIODES; TUNNELING (EXCAVATION); TUNNELS;

DIRECT TUNNELING; DOMINANT TRANSPORTS; EXPERIMENTAL DATUMS; MULTIPHONON; NONRESONANT; NONRESONANT TUNNELING; PEAK CURRENTS; RESONANT ELECTRON TUNNELING; THEORETICAL CALCULATIONS; TRANSPORT MECHANISMS; TUNNELING PROCESSES; VOLTAGE CHARACTERISTICS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 56349155030     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3013886     Document Type: Article

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