A nanoparticulate indium tin oxide field-effect transistor with solid electrolyte gating

Nanotechnology

Volumn 19, Issue 43, 2008, Pages

  Dasgupta, S ^a   Gottschalk, S ^a   Kruk, R ^a   Hahn, H ^a  

^a KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABS RESINS; CONDUCTING POLYMERS; DRAIN CURRENT; ELECTROLYSIS; ELECTROLYTES; FIELD EFFECT TRANSISTORS; INDIUM; MESFET DEVICES; NANOPARTICLES; NANOSTRUCTURES; PHOTOLITHOGRAPHY; REDOX REACTIONS; SOLID ELECTROLYTES; TIN; TITANIUM COMPOUNDS; TRANSISTORS; TRANSPORT PROPERTIES;

CONDUCTING CHANNELS; DOUBLE LAYER CHARGING; ELECTROLYTE GATING; GATE POTENTIALS; INDIUM TIN OXIDES; LOW DIMENSIONS; ON/OFF RATIOS; SOLID POLYMER ELECTROLYTES; STATE CURRENTS; SUBTHRESHOLD SWINGS; TRANSPARENT CONDUCTING OXIDES;

METALLIC COMPOUNDS;

ELECTROLYTE; INDIUM TIN OXIDE; METAL OXIDE; NANOPARTICLE; UNCLASSIFIED DRUG;

ARTICLE; CHANNEL GATING; CONTROLLED STUDY; ELECTRIC CAPACITANCE; ELECTROCHEMISTRY; ELECTRODE; FIELD EFFECT TRANSISTOR; OXIDATION REDUCTION REACTION; PRIORITY JOURNAL;

EID: 56349147052     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/43/435203     Document Type: Article

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