SCOPUS 정보 검색 플랫폼

Volumn 20, Issue 37, 2010, Pages 8010-8015

Low-voltage transparent SnO2 nanowire transistors gated by microporous SiO2 solid-electrolyte with improved polarization response

(5) Sun, Jia a,b Liu, Huixuan b Jiang, Jie b Lu, Aixia b Wan, Qing a,b

a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING (China)

b HUNAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENT FREQUENCY; DIPOLE RELAXATION; DOUBLE LAYERS; FIELD-EFFECT MOBILITIES; GATE CAPACITANCE; ION-SENSITIVE SENSOR; IONIC MIGRATION; LOW-VOLTAGE; MICRO-POROUS; MOBILE IONS; NANOWIRE FET; NANOWIRE TRANSISTORS; NOVEL DEVICES; ON/OFF RATIO; OPERATING VOLTAGE; POLARIZATION RESPONSE; REPRODUCIBILITIES; SHADOW MASK; SPECIFIC CAPACITANCE; STATIC AND DYNAMIC; SUBTHRESHOLD SWING;

CAPACITANCE; ELECTRIC WIRE; MICROPOROSITY; NANOWIRES; POLARIZATION; SILICON COMPOUNDS;

SOLID ELECTROLYTES;

EID: 77956484776 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c0jm01233e Document Type: Article

Times cited : (31)

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