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Volumn 106, Issue 5, 2009, Pages

Study of electrical performance and stability of solution-processed n -channel organic field-effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

BUTYRIC ACIDS; CHANNEL LENGTH; ELECTRICAL BEHAVIORS; ELECTRICAL BIAS; ELECTRICAL PERFORMANCE; GATE VOLTAGES; HIGH CURRENTS; HIGH MOBILITY; LOW THRESHOLD VOLTAGE; METAL ELECTRODES; METAL/SEMICONDUCTOR INTERFACE; METHYL ESTERS; N-CHANNEL; ON/OFF RATIO; ORGANIC FIELD-EFFECT TRANSISTORS; SOLUTION-PROCESSED; SOURCE/DRAIN ELECTRODES; SUBTHRESHOLD SLOPE;

EID: 70349318557     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3204655     Document Type: Article
Times cited : (41)

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