Lithography-free, self-aligned inkjet printing with sub-hundred-nanometer resolution

Advanced Materials

Volumn 17, Issue 8, 2005, Pages 997-1001

  Sele, Christoph W ^a   Von Werne, Timothy ^b   Friend, Richard H ^a   Sirringhaus, Henning ^a,b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Plastic Logic Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROPHOBICITY; INK; LITHOGRAPHY; NANOTECHNOLOGY; ORGANIC POLYMERS; PLASMAS; SURFACE TENSION; SURFACE TREATMENT; THIN FILM TRANSISTORS;

CARBON TETRAFLUORIDE; POLY(3,4-ETHYLENEDIOXYTHIOPHENE) (PEDOT); POLY(STYRENE SULFONATE) (PSS); SELF-ALIGNED PRINTING (SAP);

PRINTING;

INK JET PRINTING; LITHOGRAPHY; PLASMA; POLYMERS; SURFACE TENSION; SURFACE TREATMENT; WATER REPELLENCE;

EID: 17844409302     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200401285     Document Type: Article

References (26)

1. S. R. Forrest, Nature 2004, 428, 911.
2. B.-J. de Gans, P. C. Duineveld, U. S. Schubert, Adv. Mater. 2004, 16, 203.
3. Handbook of Print Media: Technologies and Production Methods (Ed: H. Kipphan), Springer, New York 2001.
4. Higher-resolution printing has been demonstrated by pre-patterning the substrate into hydrophilic and hydrophobic surface regions to prevent uncontrolled spreading of ink droplets on the substrate [7], but this technique is only practical for micrometer-size features. For submicrometer features (500 nm), it requires high-resolution lithography, such as electron-beam lithography, to define the surface-energy substrate pre-pattern [22]. However, this is expensive and thus incompatible with the concept of low-cost manufacturing on flexible substrates.
5. M. Muthukumar, C. K. Ober, E. L. Thomas, Science 1997, 277, 1225.
6. O. Ikkala, G. ten Brinke, Science 2002, 295, 2407.
7. H. Sirringhaus, T. Kawase, R. H. Friend, T. Shimoda, M. Inbasekaran, W. Wu, E. P. Woo, Science 2000, 290, 2123.
8. F. D. Egitto, F. Emmi, R. S. Horwath, V. Vukanovic, J. Vac. Sci. Technol., B: Microelectron. Process. Phenom. 1985, 3, 893.
9. R. G. Poulsen, J. Vac. Sci. Technol. 1977, 14, 266.
10. R. C. Daniel, J. C. Berg, J. Colloid Interface Sci. 2003, 260, 244.
11. D. Voss, Nature 2000, 407, 442.
12. G. H. Gelinck, H. E. A. Huitema, E. Van Veenendaal, E. Cantatore, L. Schrijnemakers, J. B. P. H. Van der Putten, T. C. T. Geuns, M. Beenhakkers, J. B. Giesbers, B. H. Huisman, E. J. Meijer, E. M. Benito, F. J. Touwslager, A. W. Marsman, B. J. E. Van Rens, D. M. De Leeuw, Nat. Mater. 2004, 3, 106.
13. A. Knobloch, A. Bernds, W. Clemens, Mater. Res. Soc. Symp. Proc. 2003, 736, D6.3.1.
14. M. D. Austin, S. Y. Chou, Appl. Phys. Lett. 2002, 81, 4431.
15. C.-D. Kim, M. Matsumura, IEEE Trans. Electron Devices 1996, 43, 2172.
16. L.-L. Chua, P. K. H. Ho, H. Sirringhaus, R. H. Friend, Appl. Phys. Lett. 2004, 84, 3400.
17. M. Halik, H. Klauk, U. Zschieschang, G. Schmid, C. Dehm, M. Schütz, S. Maisch, F. E. Enberger, M. Brunnbauer, F. Stellaci Nature 2004, 431, 963.
18. P. F. Baude, D. A. Ender, M. A. Haase, T. W. Kelley, D. V. Muyres, S. D. Theiss, Appl. Phys. Lett. 2003, 82, 3964.
19. H. Sirringhaus, D. S. Thomas, N. Tessler, P. J. Brown, R. H. Friend, in Advances in Solid State Physics, Vol. 39 (Ed: B. Kramer), Vieweg, Braunschweig, Germany 1999, p. 101.
20. L. Wang, T. A. Fjeldly, B. Iniguez, H. C. Slade, M. Shur, IEEE Trans. Electron Devices 2000, 47, 387.
21. L. Bürgi, H. Sirringhaus, R. H. Friend, Appl. Phys. Lett. 2002, 80, 2913.
22. J. Z. Wang, Z. H. Zheng, H. W. Li, W. T. S. Huck, H. Sirringhaus, Nat. Mater. 2004, 3, 171.
23. F. Brochard, Langmuir 1989, 5, 432.
24. T. Kawase, H. Sirringhaus, R. H. Friend, T. Shimoda, Adv. Mater. 2001, 13, 1601.
25. Faster polymer circuits have only been reported for photolithogra- phically fabricated devices: W. Fix, A. Ullmann, J. Ficker, W. Clemens, Appl. Phys. Lett. 2002, 81, 1735.
26. -1), but this value is likely to be lowered due to the presence of ions in the PEDOT/PSS dispersion: M. R. Porter, Handbook of Surfactants, 2nd ed., Chapman and Hall, London 1994.