Frequency operation of low-voltage, solution-processed organic field-effect transistors

Semiconductor Science and Technology

Volumn 26, Issue 3, 2011, Pages

  Caironi, M ^a   Noh, Y Y ^b   Sirringhaus, H ^c  

^a ISTITUTO ITALIANO DI TECNOLOGIA   (Italy)

^b Hanbat National University   (South Korea)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL EVIDENCE; FIGURES OF MERITS; FIRST-PRINCIPLES; FREQUENCY OPERATION; LOW-VOLTAGE; MAIN PARAMETERS; SCALABLE APPROACH; SOLUTION-PROCESSED; TRANSITION FREQUENCIES;

FIELD EFFECT TRANSISTORS; MESFET DEVICES;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 79951861430     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/3/034006     Document Type: Article

References (26)

1. Park S K, Jackson T N, Anthony J E and Mourey D A 2007 Appl. Phys. Lett. 91 063514
2. Yan H, Chen Z H, Zheng Y, Newman C, Quinn J R, Dotz F, Kastler M and Facchetti A 2009 Nature 457 679
3. Gelinck G, Heremans P, Nomoto K and Anthopoulos T D 2010 Adv. Mater. 22 3778
4. Klauk H 2010 Chem. Soc. Rev. 39 2643-66
5. Salleo A, Kline R J, De Longchamp D M and Chabinyc M L 2010 Adv. Mater. 22 3812
6. Sedra A S and Smith K C 2003 Microelectronics Circuits 5th edn (New York: Oxford University Press)
7. Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley)
8. Noh Y Y, Zhao N, Caironi M and Sirringhaus H 2007 Nat. Nanotechnol. 2 784-9
9. Bode D, Myny K, Verreet B, van der Putten B, Bakalov P, Steudel S, Smout S, Vicca P, Genoe J and Heremans P 2010 Appl. Phys. Lett. 96 133307
10. Sekitani T, Noguchi Y, Zschieschang U, Klauk H and Someya T 2009 Proc. Natl Acad. Sci., U. S. A. 105 4976-80
11. Uno M, Tominari Y and Takeya J 2008 Appl. Phys. Lett. 93 173301
12. Nakayama K, Fujimoto and Yokoyama M 2009 Organ. Electron. 10 543-6
13. Tsividis Y 2008 Operation and Modeling of the MOS Transistor 2nd edn (Oxford: Oxford University Press)
14. Gray P R, Hurst P J, Lewis S H and Meyer R G 2001 Analysis and Design of Analog Integrated Circuits 4th edn (New York: Wiley)
15. Noh Y Y and Sirringhaus H 2009 Organ. Electron. 10 174-80
16. Cheng X Y, Caironi M, Noh Y Y, Wang J P, Newman C, Yan H, Facchetti A and Sirringhaus H 2010 Chem. Mater. 22 1559-66
17. Caironi M, Gili E, Sakanoue T, Cheng X and Sirringhaus H 2010 ACS Nano 4 1451-6
18. Sele C W, von Werne T, Friend R H and Sirringhaus H 2005 Adv. Mater. 17 997-1001
19. Sirringhaus H, Kawase T, Friend R H, Shimoda T, Inbasekaran M, Wu W and Woo E P 2000 Science 290 2123
20. McCulloch I et al 2006 Nat. Mater. 5 328-33
21. Richards T J and Sirringhaus H 2007 J. Appl. Phys. 102 094510
22. Gundlach D J, Zhou L, Nichols J A, Jackson T N, Necliudov P V and Shur M S 2006 J. Appl. Phys. 100 024509
23. Wagner V, Wobkenberg P, Hoppe A and Seekamp J 2006 Appl. Phys. Lett. 89 243515
24. Caironi M, Newman C, Moore J R, Natali D, Yan H, Facchetti A and Sirringhaus H 2010 Appl. Phys. Lett. 96 183303
25. Park J U et al 2007 Nat. Mater. 6 782-9
26. Gili E, Caironi M and Sirringhaus H 2010 Picoliter Printing Comprehensive Nanoscience and Technology (New York: Academic)