Nanoscale n-channel and ambipolar organic field-effect transistors

Applied Physics Letters

Volumn 88, Issue 18, 2006, Pages

  Jung, Taeho ^a   Yoo, Byungwook ^a   Wang, Liang ^a   Dodabalapur, Ananth ^a   Jones, Brooks A ^b   Facchetti, Antonio ^b   Wasielewski, Michael R ^b   Marks, Tobin J ^b  

^a The University of Texas at Austin   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR ORGANIC TRANSISTORS; FIELD-EFFECT HOLE; N-CHANNEL; ORGANIC FIELD-EFFECT TRANSISTORS (OFETS);

ELECTRON MOBILITY; HETEROJUNCTIONS; HOLE MOBILITY; OLEFINS; SEMICONDUCTING ORGANIC COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 33646522994     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2200591     Document Type: Article

References (19)

1. A. Facchetti, M. Mushrush, M. H. Yoon, G. R. Hutchison, M. A. Ratner, and T. J. Marks, J. Am. Chem. Soc. 126, 13859 (2004).
2. Z. Bao, Y. Feng, A. Dodabalapur, V. R. Raju, and A. J. Lovinger, Chem. Mater. 9, 1299 (1997).
3. C. R. Newman, C. D. Frisbie, D. A. da Silva, J. L. Bredas, P. C. Ewbank, and K. R. Mann, Chem. Mater. 16, 4436 (2004).
4. H. E. Katz, A. J. Lovinger, J. Johnson, C. Kloc, T. Siegrist, W. Li, Y.-Y. Lin, and A. Dodabalapur, Nature (London) 404, 478 (2000).
5. B. A. Jones, M. J. Ahrens, M.-H. Yoon, A. Facchetti, T. J. Marks, and M. R. Wasielewski, Angew. Chem., Int. Ed. 43, 6363 (2004).
6. M.-H. Yoon, S. DiBenedetto, A. Facchetti, and T. J. Marks, J. Am. Chem. Soc. 127, 1348 (2005).
7. Y. Hayashi, H. Kanamori, I. Yamada, A. Takasu, S. Takagi, and K. Kaneko, Appl. Phys. Lett. 86, 052104 (2005).
8. E. Kuwahara, Y. Kubozono, T. Hosokawa, T. Nagano, K. Masunari, and A. Fujiwara, Appl. Phys. Lett. 85, 4765 (2004).
9. A. Dodabalapur, H. E. Katz, L. Torsi, and R. C. Haddon, Appl. Phys. Lett. 68, 1108 (1996).
10. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1982).
11. R. J. Chesterfield, J. C. McKeen, C. R. Newman, P. C. Ewbank, D. A. da Silva Filho, J.-L. Bredas, L. L. Miller, K. R. Mann, and C. D. Frisbie, J. Phys. Chem. B 108, 19281 (2004).
12. Y. Takahashi, T. Hasegawa, Y. Abe, Y. Tokura, K. Nishimura, and G. Saito, Appl. Phys. Lett. 86, 063504 (2005).
13. B. Yoo, T. Jung, D. Basu, A. Dodabalapur, B. A. Jones, A. Facchetti, M. R. Wasielewski, and T. J. Marks, Appl. Phys. Lett. 88, 082104 (2006).
14. L. Wang, D. Fine, T. Jung, D. Basu, H. V. Seggern, and A. Dodabalapur, Appl. Phys. Lett. 85, 1772 (2004).
15. H. Y. Choi, S. H. Kim, and J. Jang, Adv. Mater. (Weinheim, Ger.) 16, 732 (2004).
16. M. J. Ahrens, M. J. Fuller, and M. R. Wasielewski, Chem. Mater. 15, 2684 (2003).
17. A. Dodabalapur, L. Torsi, and H. E. Katz, Science 268, 270 (1995).
18. A. Dodabalapur, H. E. Katz, L. Torsi, and R. C. Haddon, Science 269, 1560 (1995).
19. J. Wang, H. Wang, X. Yan, H. Huang, and D. Yan, Appl. Phys. Lett. 87, 093507 (2005).