A biophysically-based neuromorphic model of spike rate- and timing-dependent plasticity

Proceedings of the National Academy of Sciences of the United States of America

Volumn 108, Issue 49, 2011, Pages

  Rachmuth, Guy ^a,b   Shouval, Harel Z ^c   Bear, Mark F ^a   Poon, Chi Sang ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b HARVARD UNIVERSITY   (United States)

^c UNIVERSITY OF TEXAS MEDICAL SCHOOL   (United States)

Author keywords

Iono neuromorphic modeling; Rate based synaptic plasticity; Silicon neuron; Subthreshold microelectronics; VLSI circuit

Indexed keywords

4 AMINOBUTYRIC ACID RECEPTOR; AMPA RECEPTOR; ENDOCANNABINOID; N METHYL DEXTRO ASPARTIC ACID RECEPTOR;

ARTICLE; BIOPHYSICS; CALCIUM CELL LEVEL; COMPLEMENTARY METAL OXIDE SEMICONDUCTOR; EXCITATION; INHIBITION KINETICS; LONG TERM DEPRESSION; LONG TERM POTENTIATION; MODEL; NERVE CELL PLASTICITY; NEUROMORPHIC MODEL; POSTSYNAPTIC MEMBRANE; PRIORITY JOURNAL; SEMICONDUCTOR; SIGNAL TRANSDUCTION; SYNAPSE;

ACTION POTENTIALS; ANIMALS; BIOPHYSICAL PHENOMENA; CALCIUM; EXCITATORY POSTSYNAPTIC POTENTIALS; HUMANS; LONG-TERM POTENTIATION; LONG-TERM SYNAPTIC DEPRESSION; METALS; MODELS, NEUROLOGICAL; NERVE NET; NEURONAL PLASTICITY; NEURONS; OXIDES; RECEPTORS, AMPA; RECEPTORS, N-METHYL-D-ASPARTATE; SEMICONDUCTORS; SIGNAL PROCESSING, COMPUTER-ASSISTED; SYNAPTIC TRANSMISSION; TIME FACTORS;

EID: 83755195671     PISSN: 00278424     EISSN: 10916490     Source Type: Journal    
DOI: 10.1073/pnas.1106161108     Document Type: Article

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