An organic/Si nanowire hybrid field configurable transistor

Nano Letters

Volumn 8, Issue 3, 2008, Pages 876-880

  Lai, Qianxi ^a   Li, Zhiyong ^b   Zhang, Lei ^a   Li, Xuema ^b   Stickle, William F ^c   Zhu, Zuhua ^a   Gu, Zhen ^a   Kamins, Theodore I ^b   Williams, R Stanley ^b   Chen, Yong ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

^c HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION OF; CONDUCTIVE LAYERS; CONFIGURABILITY; CONFIGURABLE; DEFECT TOLERANCES; GATE VOLTAGES; HYBRID FIELDS; IODIDE IONS; MEH-PPV; METHOXY; NONVOLATILE; P-PHENYLENE VINYLENES; PROGRAMMABLE CIRCUITS; SI NANOWIRES;

FIELD EFFECT TRANSISTORS; NANOWIRES; ORGANIC POLYMERS; SEMICONDUCTING SILICON COMPOUNDS;

CONDUCTING POLYMERS;

EID: 55849107152     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl073112y     Document Type: Article

References (19)

1. The International Technology Roadmap for Semiconductors: http://www.itrs.net/.
2. Cui, Y.; Zhong, Z. H.; Wang, D. L.; Wang, W. U.; Lieber, C. M. Nano Lett. 2003, 3, 149-152.
3. Tans, S. J.; Verschueren, A. R. M.; Dekker, C. Nature 1998, 393, 49-52.
4. Chen, Y.; Ohlberg, D. A. A.; Li, X. M.; Stewart, D. R.; Williams, R. S.; Jeppesen, J. O.; Nielsen, K. A.; Stoddart, J. F.; Olynick, D. L.; Anderson, E. Appl. Phys. Lett. 2003, 82, 1610-1612.
5. Huang, Y.; Duan, X. F.; Wei, Q. Q.; Lieber, C. M. Science 2001, 291 630-633.
6. Derycke, V.; Martel, R.; Appenzeller, J.; Avouris, P. Nano Lett. 2001, 1, 453-456.
7. Chen, Y.; Jung, G. Y.; Ohlberg, D. A. A.; Li, X. M.; Stewart, D. R.; Jeppesen, J. O.; Nielsen, K. A.; Stoddart, J. F.; Williams, R. S. Nanotechnology 2003, 14, 462-468.
8. Heath, J. R.; Kuekes, P. J.; Snider, G. S.; Williams, R. S. Science 1998, 280, 1716-1721.
9. Goldstein, S.; Budiu, M.; Mishra, M.; Venkataramani, G. Reconfigurable Computing and Electronic Nanotechnology. In Proceedings of the IEEE International Conference on Application-Specific Systems. Architectures, and Processors, 2003; IEEE: New York, 2003; pp 132-142..
10. Strukov, D. B.; Likharev, K. K. J. Nanosci. Nanotechnol. 2007, 7, 151-167.
11. Snider, G. S.; Williams, R. S. Nanotechnology 2007, 18, 035204.
12. Diorio, C.; Hasler, P.; Minch, A.; Mead, C. A. IEEE Trans. Electron Devices 1996, 43, 1972-1980.
13. Li, Q. L.; Surthi, S.; Mathur, G.; Gowda, S.; Zhao, Q.; Sorenson, T. A.; Tenent, R. C.; Muthukumaran, K.; Lindsey, J. S.; Misra, V. Appl. Phys. Lett. 2004, 85, 1829-1831.
14. Duan, X. F.; Huang, Y.; Lieber, C. M. Nano Lett. 2002, 2, 487-490.
15. Li, C.; Fan, W. D.; Lei, B.; Zhang, D. H.; Han, S.; Tang, T.; Liu, X. L.; Liu, Z. Q.; Asano, S.; Meyyappan, M.; Han, J.; Zhou, C. W. Appl. Phys. Lett. 2004, 84, 1949-1951.
16. Geller, S. Science 1967, 157, 310.
17. Lai, Q. X.; Zhu, Z. H.; Chen, Y.; Patil, S.; Wudl, F. Appl. Phys. Lett. 2006, 88, 133515.
18. Patil, S.; Lai, Q. X.; Marchioni, F.; Jung, M. Y.; Zhu, Z. H.; Chen, Y.; Wudl, F. J. Mater. Chem. 2006, 16, 4160-4164.
19. Funahashi, K. Neural Networks 1989, 2, 183-192.