Work-function-tuned TiN metal gate FDSOI transistors for subthreshold operation

IEEE Transactions on Electron Devices

Volumn 58, Issue 2, 2011, Pages 419-426

  Vitale, Steven A ^a   Kedzierski, Jakub ^a   Healey, Paul ^a   Wyatt, Peter W ^a   Keast, Craig L ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Low power; metal gate; silicon on insulator (SOI); subthreshold

Indexed keywords

CONVENTIONAL TRANSISTORS; DIELECTRIC CHARGE; EFFECTIVE WORK FUNCTION; FULLY DEPLETED SILICON-ON-INSULATOR CMOS; LOW POWER; METAL GATE; NITROGEN ANNEALING; NITROGEN FLOW; ON-CURRENTS; PERFORMANCE METRICS; REACTIVE SPUTTER DEPOSITION; SHORT-CHANNEL EFFECT; SILICON-ON-INSULATOR (SOI); SUBTHRESHOLD; SUBTHRESHOLD OPERATION; SUBTHRESHOLD SWING; TIN METAL GATE; ULTRA-LOW POWER;

GATE DIELECTRICS; GATES (TRANSISTOR); METALS; POLYSILICON; THRESHOLD ELEMENTS; TITANIUM NITRIDE; WORK FUNCTION;

DIELECTRIC MATERIALS;

EID: 79151482472     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2092779     Document Type: Article

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