Nonstoichiometry-induced carrier modification in gapless type atomic switch device using Cu2S mixed conductor

Applied Physics Express

Volumn 2, Issue 5, 2009, Pages

  Tsuchiya, Takashi ^a   Oyama, Yukiko ^a   Miyoshi, Shogo ^a   Yamaguchi, Shu ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AC-IMPEDANCE; ASYMMETRIC CONFIGURATIONS; ATOMIC SWITCHES; CARRIER MODIFICATION; DC BIAS VOLTAGE; DC POLARIZATION; ELECTRICAL POTENTIAL FIELD; ION BLOCKING; MIXED CONDUCTORS; NON-STOICHIOMETRY; P-TYPE CONDUCTIVITY; REVERSIBLE ELECTRODES; S THIN FILMS; SWITCHING PROPERTIES; VACANCY MIGRATION;

ATOMS; COPPER; ELECTRIC IMPEDANCE; ELECTRODES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 66949114273     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.055002     Document Type: Article

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