Bias-voltage application in hard x-ray photoelectron spectroscopy for characterization of advanced materials

e-Journal of Surface Science and Nanotechnology

Volumn 8, Issue , 2010, Pages 81-83

  Yamashita, Yoshiyuki ^a,b   Ohmori, Kenji ^c   Ueda, Shigenori ^a   Yoshikawa, Hideki ^a   Chikyow, Toyohiro ^b   Kobayashi, Keisuke ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b Advanced Electronic Materials Center   (Japan)

^c WASEDA UNIVERSITY   (Japan)

Author keywords

Crystalline amorphous interfaces; Silicon; X ray photoelectron spectroscopy

Indexed keywords

AMORPHOUS SILICON; BIAS VOLTAGE; ELECTRONIC STATES; INTERFACE STATES; PHOTOELECTRONS; PHOTONS; SILICA; SILICON; SILICON OXIDES; X RAYS;

ADVANCED MATERIALS; CRYSTALLINE-AMORPHOUS INTERFACES; DEVICE OPERATIONS; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; INTERFACE ELECTRONICS; OPERATING DEVICES; SIO2/SI(100); VOLTAGE APPLICATIONS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77952784663     PISSN: None     EISSN: 13480391     Source Type: Journal    
DOI: 10.1380/ejssnt.2010.81     Document Type: Conference Paper

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