Growth and transport properties of p-type GaNBi alloys

Journal of Materials Research

Volumn 26, Issue 23, 2011, Pages 2887-2894

  Levander, Alejandro X ^a,b   Novikov, Sergei V ^c   Liliental Weber, Zuzanna ^a   Dos Reis, Roberto ^a,d   Denlinger, Jonathan D ^a   Wu, Junqiao ^a,b   Dubon, Oscar D ^a,b   Foxon, C T ^c   Yu, Kin M ^a   Walukiewicz, Wladek ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b University of California Berkeley   (United States)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^d FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

Bi; Nitride; Semiconducting

Indexed keywords

AMORPHOUS MATRICES; CONDUCTION BAND EDGE; GA FLUX; LOW GROWTH TEMPERATURE; LOW TEMPERATURES; ORDERS OF MAGNITUDE; P-TYPE; PARTIAL DENSITY OF STATE; SEMICONDUCTING; SOFT X-RAY EMISSIONS; VALENCE BAND EDGES;

BISMUTH; ELECTROMAGNETIC WAVE ABSORPTION; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NITRIDES; SAPPHIRE; SEMICONDUCTOR GROWTH; TRANSPORT PROPERTIES; X RAY ABSORPTION SPECTROSCOPY;

CERIUM ALLOYS;

EID: 82955168344     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2011.376     Document Type: Article

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