Low gap amorphous GaN1-x Asx alloys grown on glass substrate

Applied Physics Letters

Volumn 97, Issue 10, 2010, Pages

  Yu, K M ^a   Novikov, S V ^b   Broesler, R ^a,c   Liliental Weber, Z ^a   Levander, A X ^a,c   Kao, V M ^a   Dubon, O D ^a,c   Wu, J ^a,c   Walukiewicz, W ^a   Foxon, C T ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^c University of California Berkeley   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENTS; AMORPHOUS GAN; AS CONTENT; BAND ANTI-CROSSING MODELS; BAND-GAP VALUES; GLASS SUBSTRATES; HOMOGENEOUS COMPOSITION; OPTICAL ABSORPTION EDGE; PHOTOVOLTAIC APPLICATIONS; PYREX GLASS;

ABSORPTION; CRYSTALLINE MATERIALS; ENERGY GAP; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; GLASS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SUBSTRATES;

AMORPHOUS FILMS;

EID: 77956594762     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3488826     Document Type: Article

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