GaN1-xBix: Extremely mismatched semiconductor alloys

Applied Physics Letters

Volumn 97, Issue 14, 2010, Pages

  Levander, A X ^a,b   Yu, K M ^a   Novikov, S V ^c   Tseng, A ^a,b   Foxon, C T ^c   Dubon, O D ^a,b   Wu, J ^a,b   Walukiewicz, W ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b University of California Berkeley   (United States)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANTICROSSINGS; GAN CRYSTALS; LOCALIZED STATE; LOW TEMPERATURES; MATRIX; NARROW BANDS; NON EQUILIBRIUM; SAPPHIRE SUBSTRATES; SEMI-CONDUCTOR ALLOYS;

AMORPHOUS ALLOYS; AMORPHOUS FILMS; CERIUM ALLOYS; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS;

GALLIUM ALLOYS;

EID: 77958042438     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3499753     Document Type: Article

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