Bismuth a new surfactant or contact for GaN films grown by molecular beam epitaxy

Physica Status Solidi (A) Applied Research

Volumn 192, Issue 2, 2002, Pages 441-445

  Foxon, C T ^a   Novikov, S V ^a   Li, T ^a   Campion, R P ^a   Winser, A J ^a   Harrison, I ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BISMUTH; FILM PREPARATION; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; METALLIC FILMS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; X RAY ANALYSIS;

IN-SITU CONTACTS;

SEMICONDUCTING FILMS;

EID: 0036671578     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200208)192:2<441::AID-PSSA441>3.0.CO;2-U     Document Type: Article

References (10)