Micro-spectroscopy on silicon wafers and solar cells

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Gundel, Paul ^a   Schubert, Martin C ^a   Heinz, Friedemann D ^a   Woehl, Robert ^a   Benick, Jan ^a   Giesecke, Johannes A ^a   Suwito, Dominik ^a   Warta, Wilhelm ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; PHOTOLUMINESCENCE SPECTROSCOPY; RESONANCE; SILICON SOLAR CELLS; STRESS MEASUREMENT; CARRIER MOBILITY; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS;

CARRIER RECOMBINATION; CHARACTERIZATION TECHNIQUES; MICROPHOTOLUMINESCENCE SPECTROSCOPY; MULTI-CRYSTALLINE SILICON; PHOTOVOLTAIC PRODUCTIONS; RECOMBINATION ACTIVITY; SUB-MICRON RESOLUTIONS; TECHNOLOGICAL PROCESS; BACK SURFACE FIELDS; CARRIER DIFFUSIONS; DENSITY-DEPENDENT; DOPING DENSITIES; DOPING STRUCTURES; EXCITATION SOURCES; FANO RESONANCES; FIRST ORDER; FUNDAMENTAL RESEARCH; METAL PRECIPITATES; MICRO SPECTROSCOPY; MICRO-DEFECTS; MICRO-RAMAN; PIEZORESISTANCE; RAMAN PEAK; SELECTIVE EMITTERS; STRESS DEPENDENCE; SUBMICRON RESOLUTION;

SILICON WAFERS;

EID: 82655177886     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-197     Document Type: Article

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