Submicron resolution carrier lifetime analysis in silicon with fano resonances

Physica Status Solidi - Rapid Research Letters

Volumn 4, Issue 7, 2010, Pages 160-162

  Gundel, Paul ^a   Schubert, Martin C ^a   Heinz, Friedemann D ^a   Benick, Jan ^a   Zizak, Ivo ^b   Warta, Wilhelm ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

Carrier lifetime; Fano resonances; Multicrystalline silicon; Raman spectroscopy

Indexed keywords

CARRIER RECOMBINATION; DOPING DENSITIES; EXCITATION LASERS; FANO RESONANCES; FIRST ORDER; INJECTION LEVELS; MULTI-CRYSTALLINE SILICON; RAMAN PEAK; SPATIAL RESOLUTION; SPECTRAL POSITION; SUBMICRON RESOLUTION; SYNCHROTRON X-RAY FLUORESCENCES;

DEFECTS; LASER EXCITATION; POLYSILICON; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RESONANCE;

CARRIER LIFETIME;

EID: 77954780816     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201004170     Document Type: Article

References (15)

1. C. Donolato and M. Kittler, J. Appl. Phys. 63, 1569 (1988)
2. W. Kwapil et al., Appl. Phys. Lett. 95, 232113 (2009).
3. T. Buonassisi et al., J. Appl. Phys. 95, 1556 (2004).
4. M. Becker et al., J. Appl. Phys. 101, 063531 (2007).
5. U. Fano, Phys. Rev. 124, 1866 (1961).
6. U. Fano and J. W. Cooper, Phys. Rev. 137, A1364 (1965).
7. F. Cerdeira et al., Phys. Rev. B 8, 4734 (1973).
8. V. Magidson and R. Beserman, Phys. Rev. B 66, 195206 (2002).
9. M. Becker et al., J. Appl. Phys. 106, 074515 (2009).
10. J. J. Letcher, Appl. Phys. Lett. 90, 252104 (2007).
11. P. Gundel et al., J. Appl. Phys. (submitted 2010).
12. P. Gundel et al., Phys. Status Solidi A 207, 436 (2010).
13. P. Gundel et al., Phys. Status Solidi RRL 3, 230 (2009).
14. A. Erko and I. Zizak, Spectrochim. Acta B 64, 833 (2009).
15. W. Seifert et. al., Phys. Status Solidi C 6, 765 (2009).