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Volumn 76, Issue 25, 2000, Pages 3777-3779

Schottky effect model of electrical activity of metallic precipitates in silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000960508     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126778     Document Type: Article
Times cited : (58)

References (8)
  • 2
    • 0005888768 scopus 로고
    • edited by H. R. Huff and J. Chikawa The Electrochemical Society, Pennington, NJ
    • D. M. Lee, D. M. Maher, F. Shimura, and G. A. Rozgonyi, in Semiconductor Silicon 1990, edited by H. R. Huff and J. Chikawa (The Electrochemical Society, Pennington, NJ, 1990), p. 639.
    • (1990) Semiconductor Silicon 1990 , pp. 639
    • Lee, D.M.1    Maher, D.M.2    Shimura, F.3    Rozgonyi, G.A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.