Evaluating the aluminum-alloyed p+-layer of silicon solar cells by emitter saturation current density and optical microspectroscopy measurements

IEEE Transactions on Electron Devices

Volumn 58, Issue 2, 2011, Pages 441-447

  Woehl, Robert ^a   Gundel, Paul ^a   Krause, Jonas ^a   Ruhle, Karola ^a   Heinz, Friedemann D ^a   Rauer, Michael ^a   Schmiga, Christian ^a   Schubert, Martin C ^a   Warta, Wilhelm ^a   Biro, Daniel ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Aluminum alloyed p+ layer; emitter saturation current density; microspectroscopy; silicon solar cell

Indexed keywords

ALUMINUM PASTE; DEFECT CONCENTRATIONS; DOPED LAYERS; DOPING CONCENTRATION; EMITTER SATURATION CURRENT DENSITY; FIRING CONDITIONS; MICRO SPECTROSCOPY; MICROPHOTOLUMINESCENCE; OPTICAL MICROSPECTROSCOPY; PURE AL; SCREEN-PRINTED;

BORON; CURRENT DENSITY; DEFECTS; DOPING (ADDITIVES); ELECTRIC RESISTANCE; PASSIVATION; SHEET RESISTANCE; SILICON SOLAR CELLS; SOLAR CELLS;

ALUMINUM;

EID: 79151485012     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2093145     Document Type: Article

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