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Volumn 207, Issue 2, 2010, Pages 436-441
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Simultaneous stress and defect luminescence study on silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND GAP ENERGY;
DEFECT LUMINESCENCE;
INTERNAL STRESS;
MEASUREMENT TECHNIQUES;
MICRO RAMAN SPECTROSCOPY;
MINORITY CARRIER LIFETIMES;
MULTICRYSTALLINE;
STRESS-INDUCED;
CARRIER LIFETIME;
DEFECTS;
INSTRUMENTS;
LUMINESCENCE;
MECHANICAL STABILITY;
PHOTOLUMINESCENCE SPECTROSCOPY;
RAMAN SPECTROSCOPY;
SEMICONDUCTING SILICON COMPOUNDS;
STRESS MEASUREMENT;
SILICON WAFERS;
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EID: 76949095562
PISSN: 18626300
EISSN: 18626319
Source Type: Journal
DOI: 10.1002/pssa.200925368 Document Type: Article |
Times cited : (29)
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References (19)
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