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Volumn 115, Issue 48, 2011, Pages 23922-23928

Effect of gap states on the orientation-dependent energy level alignment at the DIP/F16CuPc donor-acceptor heterojunction interfaces

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; COPPER-HEXADECAFLUOROPHTHALOCYANINE; DONOR-ACCEPTOR HETEROJUNCTIONS; ENERGY LEVEL ALIGNMENT; FINE STRUCTURES; GAP STATE; HIGHLY ORIENTED PYROLYTIC GRAPHITE; IN-SITU; INTERFACE MORPHOLOGIES; INTERFACE PROPERTY; INTERFACIAL CHARGE TRANSFER; VACUUM LEVEL; X-RAY ADSORPTION;

EID: 82555167479     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp208645f     Document Type: Article
Times cited : (43)

References (51)
  • 42
    • 0004237782 scopus 로고
    • Springer-Verlag: Berlin
    • Stohr, J. NEXAFS Spectroscopy; Springer-Verlag: Berlin, 1992; Vol. 25.
    • (1992) NEXAFS Spectroscopy , vol.25
    • Stohr, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.